并用该仪器测定了硼扩散片的薄层电阻分布。
This instrument has been used for measuring the sheet resistance distribution for Boron diffusion chip.
并用该仪器测定了硼扩散片的薄层电阻分布。
This instrument has been used to measure the sheet resistance distribution for Boron diffusion chip.
本文介绍两步硼扩散工艺，它对改善台面功率晶体管的性能极有帮助。
This paper introduces two steps B-diffusion technology, rt is very helpful to improve the properties of mesa power transistors.
可以在横向和垂直方向中产生不同的硼扩散速率，并且可以实现与砷可比的扩散速率。
Different boron diffusion rates can be produced in the lateral and vertical directions and diffusion rates comparable to arsenic can be achieved.
通过数值计算，建立了制备过程中硅基底中的硼离子的空间浓度分布的理论模型，优化了二次硼扩散工艺条件。
The model of the Boron ion spread in wafer was analyzed by numerical simulation and the micro resistor fabrication conditions were optimized.
分析认为，冷塑性变形可使位错等缺陷增加，有利于硼原子的吸收与扩散。
The analysis indicates that cold plastic deformation results in crystal lattice defects, which facilitates the absorption and diffusion of boron atoms.
一些处理参数会导致在硼化物层上形成硼-碳层，它将起着扩散垒的作用，阻止了硼化物进一步的生长。
Some treatment parameters led to boron carbon coating above the boride layer which ACTS as a diffusion barrier and prevents a further growth of the boride layer.
结果表明，引起注入硼异常扩散的是点缺陷，而不是硼间隙原子的快扩散。
The experimental results show that the anomalous diffusion of implanted boron is caused byimplantation damages rather than fast diffusion of interstitial boron.
探讨了热浸扩散渗铝复合渗硼中的硼化物的形成机理及硼的迁移机制。
The mechanism of both forming boride and transferring of boron in the aluminized and then boromized layer were discussed.
我们预期这么浓的蒸气会扩散到固态硼的内部，然后产生颗粒状的硼化镁。
We expected that this dense vapor would diffuse into the solid boron, producing pellets of MgB2.
我们预期这么浓的蒸气会扩散到固态硼的内部，然后产生颗粒状的硼化镁。
We expected that this dense vapor would diffuse into the solid boron, producing pellets of MgB2.
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