结果，一些企业正面临将基于纳米晶硅或其他硅化合物的硅墨商业化。
As a result, a few companies are on the verge of commercializing silicon inks based on nanocrystalline silicon or on other silicon compounds.
大部分理论计算研究的是量子限制对多孔硅和纳米硅晶发光的效应。
Most of theoretical researches studied the quantum confinement effect on the luminescence of porous Si and Si nanocrystallites.
采用无电镀沉积技术在经过机械抛光的单晶硅衬底上沉积了铜纳米晶。
Copper nanocrystallites were deposited on mechanically polished single crystal silicon (sc-Si) wafers by electroless deposition method.
结果表明：薄膜由非晶硅结构转变为微晶硅结构，微晶硅晶粒尺寸在纳米级。
The results indicate that the amorphous film gradually transfers into microcrystalline Si, and the grain size is nanometer order of magnitude.
紫光和紫外光来源于二氧化硅的氧缺陷、纳米晶硅与二氧化硅的界面态发光的综合效果。
UV and purple emission were derived from the combination of oxygen vacancy defects of silica and the interface luminescence of the Si nanometer grains and silica.
对不同实验条件下所得到的多孔硅的拉曼光谱进行了分析，确认了多孔硅是具有纳米晶结构特征的材料，肯定了量子限制效应在多孔硅光致发光中的作用。
The spectra analysis showed that porous silicon is the material with nano crystal structure, and photoluminescence of PS can be explained by the model of quantum restriction effect.
本发明公开了一个使包括氢化非晶硅和氢化纳米晶硅的氢化硅薄膜具有真正本征性的方法。
The present invention discloses a method for making the hydrogenated si containing hydrogenated amorphous silicon and hydrogenated nanocrystalline silicon has real intrinsic capability.
硅基薄膜的红光发射与纳米晶硅密度及波尔半径内晶粒数目有着密切的关系。
The red emission of Si-base films is related to the density of the nanometer grains and the number of the grains in the Bohr radius.
本文研究了激光诱导化学气相沉积法制备纳米氮化硅的工作原理，提出了减少游离硅的措施，利用双光束激发制备了超微的、非晶纳米氮化硅粉体。
It is used in many areas. In this paper, the general principles of LICVD (laser induced chemical vapor deposition) were investigated and the measures to reduce dissociated si were put forward.
首席执行官欧德宁展示了英特尔的一个下一代的下一代22纳米硅芯片制造过程中取得第一个晶圆。
CEO Paul Otellini showed off Intel's first wafer of silicon chips made with a next-next-generation 22-nanometer manufacturing process.
首席执行官欧德宁展示了英特尔的一个下一代的下一代22纳米硅芯片制造过程中取得第一个晶圆。
CEO Paul Otellini showed off Intel's first wafer of silicon chips made with a next-next-generation 22-nanometer manufacturing process.
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