惰性和易于制造的优势，提供硅管。
Inertness and ease of manufacture provides advantages to silicone tubing.
特殊硅管和软管阀门使用指南与我们的想像。
Special silicone tubing and hose guides for use with our Pinch valves.
硅管还在耐化学喜欢浓酸或碱液体限制，有机溶剂或油。
Silicone tubing also has limitations in chemical resistance to fluids like concentrated acids or bases, organic solvents, or oils.
本论文通过CVD、热蒸发等方法，制备了有序化自组装纳米硅丝阵列、不同直径纳米硅丝、纳米硅管等一维纳米材料。
In this paper, we synthesized some one-dimensional nano-materials including the silicon nanowires with orderly array, different diameters and silicon nanotubes via methods of CVD,.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
多晶硅常用在被称作门的晶体管元件中，已在标准的芯片制造工艺中使用了几十年。
Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.
他希望在相近的转换效率下使碳纳米管的比硅材料的电池更便宜。
With carbon nanotubes, he hopes to achieve efficiency comparable to silicon solar cells for less cost.
即使是在目前的早期阶段，他认为硅基的氮化镓发光二极管就已经具有商业意义了。
Yet even at this early stage he thinks gallium nitride-on silicon LEDs would make commercial sense.
它拥有5英寸的屏幕使用了23个硅锗晶体管。
It had a 5-in. screen and used 23 silicon and germanium transistors.
构成晶体管的硅常常要和其他原子掺杂以改变其导电性能。
The silicon of which transistors are made is frequently doped with other elements, to affect its electrical properties.
而最新的晶体管体积很小，掺杂沟道时只需在硅中置入少量掺杂原子。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon.
虽然目前这种材料有柔性，但它们还不能像传统硅晶体管那样制造得体积小，运行速度快。
Although they are flexible, they are not as small or fast as silicon transistors.
因此，这个传感组件由一组超薄硅二极管组成一个16x16的阵列，通过极细的导线连接。
Therefore, the detector consists of a 16-by-16 array of ultra-thin silicon diodes, connected by thin wires.
所以，数以千计的这类设备能够通过使用为芯片上光学通信的高带宽而设计的硅晶体管（silicontransistors）并行地进行生产。
Thus, thousands of these devices can be built side-by-side with silicon transistors for high-bandwidth on-chip optical communications.
利维表示，利用该技术制作的晶体管比目前使用的硅晶体管小1000倍。
The transistor is about 1, 000 times smaller in area than silicon-based transistors used in electronics today, Levy says.
每一个二极管都是从硅或者蓝宝石薄片上切割下来的。
Each diode is cut from a wafer of crystals layered over a base of silicon or sapphire.
当团队用以制造硅晶体管的研发技术有实际进展的同时，萧克利的管理方式显然成为一种日益增加的负担。
While the group was making real progress in developing the technology needed to produce silicon transistors, Shockley's management style proved an increasing burden.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
电子工业用水：集成电路、硅晶片、显示管、电极管、电路管等电子元件冲洗水。
Water for electronic industry use: the wash water of electronic components such as: integrate circuit silicon wafer display tube electrode tube and circuitry tube etc.
这种半导体管是由称为非晶体硅的材料制成。
These other transistors are made with what is called amorphous silicon.
硅功率整流二极管。阴极情况。重复峰值反向电压800v。平均整流电流25a。
Silicon power rectifier diode. Cathode to case. Repetitive peak reverse voltage 800v. Average rectified forward current 25a.
探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。
The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.
很多工程师把纳管看作硅的替代品，当今，晶体管、二极管和其他半导体器件通常都是制作在硅这种介质上。
Many engineers see nanotubes as an alternative to silicon, the medium in which transistors, diodes and other semiconductor device structures are usually built today.
本文研究了多孔硅(PS)二极管表面发射电子的特性。
The characteristics of porous silicon (PS) diodes as electron surface emitting were investigated.
硅功率整流二极管，300安培。阴极情况。最大重复峰值反向电压400v。
Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 400v.
每一个二极管都从硅(或者蓝宝石为衬底的)晶片上切割下来。
Each diode is cut from a wafer of crystals layered over a base of silicon or sapphire.
为提高硅平面大功率管的成品率和可靠性，提出了一种刻蚀槽和低温钝化相结合的克服低击穿的硅平面枝术。
Silicon plane technique with etching groove and low temperature passivation is proposed to overcome low-breakdown for increasing the finished product rate and reliability of the plane powerful tube.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
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