文中详细介绍数字硅温度传感器TC77的功能，特点，以及在测控系统中与PIC单片机的接口应用。
The function and features of the digital silicon temperature sensor TC77 are introduced in this paper in details and how to develop TC77 interfacing with PIC Micro controller in telemetry system.
此芯片集成化程度较高，可以补偿硅压阻式压力传感器的温度误差和非线性误差。
It is mainly used to compensate temperature shift and non-linearity error of piezoresistive pressure sensor.
该传感器将集成大量霍尔元件技术和进行信号调理的仪表电路整合在一起，从而使与硅霍尔元件特性相关的温度漂移降到最小。
The sensor combines integrated bulk hall cell technology and instrumentation circuitry to minimize temperature related drifts associated with silicon hall cell characteristics.
介绍了一种用压力一温度复合传感器对硅压阻式压力传感器温度特性的补偿方法。
A compensate method of piezoresistive pressure sensor temperature characteristic is introduced by using a pressure - temperature complex sensor.
利用ZMD31020传感器信号处理器，实现了硅压阻式传感器的非线性及温度补偿。
The ZMD31020 is a special sensor signal processor optimized for piezoresistive sensor nonlinearity and temperature compensation.
该系统可以补偿传感器（特别是硅压阻传感器）温度误差的线性部分和高阶非线性部分。
The li near errors and high order errors of a sensor (especially piezoresistive sensor) can be corrected by using this system.
利用有限元分析工具ANSYS，对所设计的硅基微结构气体传感器的温度场进行了模拟。
The temperature distributing of micro-structure gas sensor based on silicon substrate is simulated by means of finite element analysis (FEA) tool ANSYS.
利用 与控制装置（例如可控硅元件）连接的传感器来控制温度。
The temperature is controlled by a sensor connected to a control devise such as a thyristor.
根据扩散硅压力传感器灵敏度温漂产生的原理，分析了灵敏度与温度的关系。
The sensibility correlation with temperature has been analyzed on the base of the principle of creating sensitivity temperature shifting in piezoresistive pressure sensors.
集成温度传感器是采用硅半导体集成工艺而制成的，亦称硅传感器或单片集成传感器。
Integrated temperature sensors are made by using silicon semiconductor integrated technologies, so also called silicon sensors or the single-chip integrated sensors.
基于硅压阻式传感器的工艺过程与后续电路设计，讨论了减小其温度影响的措施。
Based on the fabrication process of silicon piezoresistive sensors and the design of subsequent conditioning circuit, the measures for reducing the temperature effects on the sensors were discussed.
该传感器采用单晶硅半导体材料为温度敏感材料。
The temperature sensor based on the absorption properties of an indirect semiconductor.
该传感器采用单晶硅半导体材料为温度敏感材料。
The temperature sensor based on the absorption properties of an indirect semiconductor.
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