为形成了集成电路制造中使用的硅氧化层的方法提供。
A method for forming a silicon oxide layer for use in integrated circuit fabrication is provided.
提出了芯片门电路硅氧化层静电放电介质击穿的物理模型。
A physical model of dielectric breakdown was presented in IC silicon dioxide films.
目的研制有机硅氧化物类口腔黏膜药膏及对其基质进行评价。
OBJECTIVE To develop oral mucosal ointment of organic silicon oxide and evaluate its matrix.
采用常压CVD方法在铝合金基底上制备出硅氧化合物陶瓷膜层。
The silicon oxide films on aluminum alloys matrix were prepared by chemical vapor deposition (CVD) in ambient pressure.
微芯片制作采用了硅、硅氧化物以及金等生物相容性较好的材料。
The micro chip was fabricated with silicon, silicon dioxide and gold.
以硅、二氧化硅为原料，采用水热沉积法制备了球状纳米硅氧化物。
Spherical nanoscale silicon oxide have been prepared by hydrothermal deposition process using silicon and silica as the starting materials.
文中对原子力显微镜(afm)电场诱导硅氧化结构的部分形状特征进行了分析和讨论。
This paper analyzes and discusses some structure's features on the surface of silicon by atomic force microscope (AFM) electrical field induced oxidation.
本研究采用常压化学气相沉积（CVD）的方法在金属铝基底上制备出硅氧化合物陶瓷膜层。
A new kind of silicon oxidic film on aluminum was prepared by chemical vapor deposition (CVD) in ambient pressure.
硅氧化放热有利于铁水脱硫，这将部分抵消喷吹后炉缸氧势升高对脱硫的不利影响，结果生铁硫含量基本稳定。
It will counteract partially the harmful influence of oxygen potential elevation by the injection. As the result, the content of sulfur in hot metal basically remains stable.
所有的岩浆基本上地包括多种多样的硅酸盐矿物，高硅氧化合物；但任何给定的(岩浆)流的化学成分都可能与其他岩浆流有完全不同地化学成分。
All magma consists basically of a variety of silicate minerals, high in silicon-oxygen compounds, but the chemical composition of any given flow may differ radically from that of any other.
所述氧化层的部分被移除，以使所述沟槽填充的氧化层作为第一多晶硅层基本平面化。
Portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.
硅的熔点是958，形成二氧化硅，很高的熔点。
It melts at 958. It forms a dioxide, has a high melting point.
通常，硅碳化合物通常由加热的沙子(通常由石英构成，或称二氧化硅)和石油或煤炭中提取的碳放在电气炉内反应而得到。
Normally, silicon carbide is produced by heating sand (which is made of quartz, or silicon dioxide) in an electric furnace with carbon made from oil or coal.
在实验室研究中，库珀及其同事发现干水吸收的二氧化碳数量是同等时间内普通未结合水-硅的3倍以上。
In laboratory-scale research, Cooper and co-workersfound that dry water absorbed over three times as much carbon dioxide asordinary, uncombined water and silica in the same space of time.
在实验室研究中，库珀及其同事发现干水吸收的二氧化碳数量是同等时间内普通未结合水-硅的3倍以上。
In laboratory-scale research, Cooper and co-workers found that dry water absorbed over three times as much carbon dioxide as ordinary, uncombined water and silica in the same space of time.
硅胶-是二氧化硅(SiCO2)一种无固定形式的硅。
Silica Gel - is silicon dioxide (SiO2), an amorphous form of silica.
通常以硅酸钠水溶液作为单体硅源，氢氧化钠溶液作为碱激发剂以提高原料的溶出性。
Generally, sodium silicate solutions are used for monomer sources added with caustic soda solutions for activation of leaching out of fillers.
研究人员还发现了富含氧化铝的大量玄武岩，当它们与硅土(二氧化硅)相碰撞时，就可以引发火山爆发。
Large amounts of basalt rich in aluminum oxide were also found, which can trigger an eruption when it collides with silica.
硅和钼、钨、铬等分离，有进步抗腐蚀性和抗氧化的作用，可制造耐热钢。
Silicon and molybdenum, tungsten, chromium and other separation, has improved corrosion resistance and anti-oxidation effect, can produce heat-resistant steel.
用微弧氧化的方法在铸造铝-硅合金基体上获得陶瓷层。
Ceramic coating was obtained by micro arc oxidation on the substrate of casted aluminum silicon alloy.
我们的太阳能电池是由氧化亚铜而不是硅。
Our solar cell is made from cuprous oxide instead of silicon.
用高频光电导衰减法（PCD）研究了热氧化钝化对直拉硅少子寿命的影响。
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
本文研究在氢氧化铯催化下，三甲硅基乙炔与二芳基二硒醚的反应。
It has been researched on the reaction of trimethylsilylacetylene with diphenyl diselenide catalyzed by cesium hydroxide.
使用有限元方法分析了硅基二氧化硅波导的两种偏振补偿方法的可行性。
Two kinds of polarization compensation ways for silica waveguide on silicon are analyzed by finite element method.
我们认为很可能是多孔硅内表面的氧化作用使光致发光峰位蓝移，由氧化作用产生的非辐射复合中心导致光致发光效率的下降。
The blue shift of the PL peak is a result of oxidation of inner surfaces of PS and the decrease of PL efficiency is attributed to the produce of nonradiative recombination centers during oxidation.
我们认为很可能是多孔硅内表面的氧化作用使光致发光峰位蓝移，由氧化作用产生的非辐射复合中心导致光致发光效率的下降。
The blue shift of the PL peak is a result of oxidation of inner surfaces of PS and the decrease of PL efficiency is attributed to the produce of nonradiative recombination centers during oxidation.
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