给分离的硅参入杂质电子区域就产生电子空穴对分离从而形成电流。
An electric field created by adding impurities to the silicon splits the electron-hole pairs apart, which results in an electric current.
结果表明：电火花线切割单晶硅损伤层主要由杂质元素重污染层、重熔层和含有高密度位错的弹性畸变层组成；
The results show that the damaged layer of silicon cut by WEDM mainly appears massive impurity elements, remelted and elastic distortion with a high density dislocation.
本方法已成功地用于高阻硅材料杂质补偿度和载流子迁移率的测量。
This method has been successfully applied to the measurements of impurity compensation and carrier mobility on high resistivity silicon materials.
结果表明：络合法是除去二氯二氢硅中杂质“硼”的有效方法。
Theresults indicated that the complex method is a effective way to removal the impurity "B"from dichlorosilane.
利用高温拉伸、抗弯测试和显微压痕测试等研究手段，指出硅材料表面状况、位错和杂质是其机械性能的主要影响因素。
By means of tensile tests at high temperature, bending strength and indentation, it is found that the mechanical properties of silicon mainly depend on surface states, dislocations and impurities.
结果表明：采用此法可降低工业硅中杂质含量，降低生产成本，并可减少环境污染。
The result shows that refining industrial grade silicon with the method can decreasing impurity contents, reducing production cost, and decreasing environmental pollution.
除油剂清洁剂去腊、硅物质及其它杂质。
Remove wax, silicon and other impurities with de-degrease cleaner.
表面清洁除油清洁剂去腊、硅物质及其它杂质。
Remove wax, silicon and other impurities with de-greased cleaner.
最新的晶体管尺寸非常小，在其通道中掺杂只要往硅中注入少量杂质原子，如果这个量掌握得不好，晶体管的正常运行就会受到影响。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon. Get the number wrong, and things will not work properly.
氮杂质对硅单晶的性质有重要的影响，氮在硅中的性质、存在形态以及和相关缺陷作用机理一直为人们所研究。
Nitrogen has a heavy impact on the properties of the single crystal silicon, and its properties, forms and mechanisms on reactions with related defects have been intensively investigated.
介绍了采用原子吸收光谱仪(AAS)对金属硅中铁杂质含量进行测定时，线性校正和不确定度评估的方法。
This paper describes the methods to mark the linear calibration and the uncertainty estimate when Fe in metallic silicon is determined by Atomic Absorption Spectrephotometry (AAS).
金的填隙原子向硅扩散的速率比III族和v族杂质快几个数量级。
The interstitial atoms of gold diffuse into silicon at a rate several orders of magnitude faster than the group III and V impurities.
目的解决经典化学法测定硅铁中杂质元素周期长、操作复杂、步骤繁琐的问题。
Aim To resolve the problems of long period, complex operation and many steps when determining impure elements in ferrosilicon by classic methods.
对电感耦合等离子体原子发射光谱法（ICP AES）测定金属硅中铁杂质含量的不确定度进行了合成和评估。
The combination and estimation of the uncertainty in the determination of Fe in metallic silicon using Inductively Coupled Plasmas Atomic Emissive Spectrometry(ICP-AES) is described.
其中，过渡族金属就是晶体硅中非常重要的杂质元素。
Transitional metals are some of important impurities in silicon.
由电热还原法制取的一次铝硅合金含有铝55%，硅25%和一些杂质。
The coarse Al-Si alloy produced by carbon thermal reduction of aluminous ore includes 55% aluminum, 25% silicon and some impurities.
与此同时，在新的理论认识与技术条件下，硅材料改性，杂质发光，缺陷工程和硅基异质外延也呈现出新的发展趋势。
With deepened research of porous Si and the advancing nanometer science, a path towards nanometer light-emitting materials is being opened up.
多晶硅化金属层设置于杂质掺杂多晶硅层上，而多晶硅化金属层与多晶硅层可作为字线。
A polycide layer is defined over the impurity doped polysilicon layer. The polycide layer and the polysilicon layer function as a word line.
由于硅的饱和蒸汽压较小，在硅的熔点附近进行高温熔炼可以使蒸汽压较大的杂质元素从硅熔体中挥发出来从而达到去除的目的。
Because of the low vapor pressure of silicon, the pure elements with higher vapor pressure than that of silicon can be expected to be removed during the melting of silicon.
用含锆硅铁以及它的复合合金对含铅、砷、锡等杂质元素的铸铁进行孕育处理，可以有效地改善铸铁的组织和性能。
Inoculating the cast iron containing lead, complex alloy can improve effectively the structure and properties of the cast iron.
本文介绍用激光掺杂技术在高阻硅中掺入杂质来制造核辐射结型探测器的方法。
In this paper fabrication of nuclear radiation detectors by using laser-doping technique is reported.
冶金硅是生产有机硅和电子用硅的重要原材料，需精炼处理以降低其中的杂质。
Metallurgical grade silicon is raw materials for organic and electronic USES. The impurities should be reduced through refining treatment, the method of oxidizing is priority now.
铝硅合金因其具有优良的性能而得到了广泛地应用，铁相是铝硅合金中最为常见的杂质。
Al Si alloy was widely used because of its good properties, Iron is the most common impurity in al Si alloy.
硅中碳和氧是重要的非金属杂质，它们对硅单晶的性质有着重要影响。
Oxygen and carbon are important nonmetallic impurities in silicon crystals. Notably, the characteristics of silicon crystal are affected by them.
杂质掺杂多晶硅层设置于两绝缘区与反熔丝上。
An impurity doped polysilicon layer is defined over the two insulator regions and the anti-fuse.
晶体硅中的杂质或缺陷会显著地影响各种硅基器件的性能。
The defects or precipitates in crystalline silicon may influence the properties of different silicon-base devices noticeably.
采用高纯铝加单一杂质元素的方法，研究了硼对含铁铝、含硅铝导电性的影响。
Effects of B on the electric conductivity of Fe or Si containing aluminum were examined.
此外，还总结了脱除硅氧烷、卤化烃及氮气等杂质的方法。
In addition, some methods of the removal of siloxane, halogenated hydrocarbons, and nitrogen and other impurities were introduced.
在一定的实验条件下，除钼、砷、硅的效率均达到95%以上，净化后溶液中杂质含量完全符合技术要求。钨的损失在3%左右。
The Mo, As and Si removed all exceeded 95% of each of their total amounts previously present in the crude solution while the loss of tungsten during the purification amounted to about 3%.
铁杂质是硅片制造过程中常见的重金属沾污，表面光电压（SPV）法可很好地用于测定P型硅中铁杂质。
The impurity of iron is one major heavy-metal contamination on the silicon wafer. Surface photo-voltage method(SPV) can be used to accurately measure the iron contamination within the silicon wafer.
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