PNP外延硅晶体管。低频功率放大器。
PNP epitaxial silicon transistor. Low frequency power amplifier.
利维表示，利用该技术制作的晶体管比目前使用的硅晶体管小1000倍。
The transistor is about 1, 000 times smaller in area than silicon-based transistors used in electronics today, Levy says.
1977年，他曾经发明了能够在不同设备之间切换电子信号的硅晶体管。
In 1977, he invented a silicon transistor that switches electronic signals in devices.
虽然目前这种材料有柔性，但它们还不能像传统硅晶体管那样制造得体积小，运行速度快。
Although they are flexible, they are not as small or fast as silicon transistors.
随意地，如果用锗晶体管取代硅晶体管，可使模块工作的输入电压最小为0.25V。
Optionally, the modules can operate with input voltages as low as 0.25v if you replace the silicon transistors with germanium devices.
当团队用以制造硅晶体管的研发技术有实际进展的同时，萧克利的管理方式显然成为一种日益增加的负担。
While the group was making real progress in developing the technology needed to produce silicon transistors, Shockley's management style proved an increasing burden.
所以，数以千计的这类设备能够通过使用为芯片上光学通信的高带宽而设计的硅晶体管（silicontransistors）并行地进行生产。
Thus, thousands of these devices can be built side-by-side with silicon transistors for high-bandwidth on-chip optical communications.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
它拥有5英寸的屏幕使用了23个硅锗晶体管。
It had a 5-in. screen and used 23 silicon and germanium transistors.
构成晶体管的硅常常要和其他原子掺杂以改变其导电性能。
The silicon of which transistors are made is frequently doped with other elements, to affect its electrical properties.
多晶硅常用在被称作门的晶体管元件中，已在标准的芯片制造工艺中使用了几十年。
Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.
而最新的晶体管体积很小，掺杂沟道时只需在硅中置入少量掺杂原子。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
此外，缓冲层可以减少晶体管之间的设备和硅衬底平行的传导问题。
In addition, the buffer layer can mitigate parallel conduction issues between transistor devices and the silicon substrate.
硅绝缘栅双极晶体管(IGBT)技术在进步，成为更好和更便宜。
Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.
空间电磁脉冲注入硅双极型晶体管后可能会导致晶体管烧毁。
Bipolar junction transistors may be burned out by injected electromagnetic pulse.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
本文对低温多晶硅薄膜晶体管（TFT）AM-OLED的驱动技术进行了研究。
This paper aims at the research on drive technology of LTPS (Low Temperature Poly-Silicon) TFT (Thin Film Transistor) AM-OLEDs.
此外，缓冲层地址和缓解晶格薄膜之间的不匹配而相对形成晶体管和硅衬底上。
In addition, the buffer layer addresses and mitigates lattice mismatches between the film relative to which the transistor is formed and the silicon substrate.
很多工程师把纳管看作硅的替代品，当今，晶体管、二极管和其他半导体器件通常都是制作在硅这种介质上。
Many engineers see nanotubes as an alternative to silicon, the medium in which transistors, diodes and other semiconductor device structures are usually built today.
简要介绍了多晶硅薄膜晶体管的结构、器件特性以及在有源矩阵液晶显示器中的应用。
In this paper, the structure, properties of polycrystalline silicon thin film transistor were explained, and its application in the active matrix liquid display device was described.
最新的晶体管尺寸非常小，在其通道中掺杂只要往硅中注入少量杂质原子，如果这个量掌握得不好，晶体管的正常运行就会受到影响。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon. Get the number wrong, and things will not work properly.
本文回顾了现阶段液晶显示器的几个研究热点，包括透反射液晶显示器、多晶硅薄膜晶体管技术及硅基液晶。
In this paper, we reviewed several hotspots of LCD research, including Transparent LCD (TS-LCD), poly-silicon thin film transistor, liquid crystal on silicon (Lcos).
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
本文介绍一种分析非晶硅场效应晶体管静态特性的非模型方法。
In this paper we shall present a non-model method on analyzing the static characteristic of a-Si FET.
首次采用多晶硅发射区RCA技术制备出微波功率晶体管。
A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time.
低温多晶硅薄膜晶体管(LTPSTFT)广泛应用于平板显示。
Low temperature polycrystalline silicon thin film transistors (LTPS TFTs) are widely used in the flat panel displays.
这些新一代计算机将同时利用光能和电能，而不是使用晶体管和硅制成的芯片。
Instead of having chips with transistors and silicon, these new computers will use both light and electrical energy.
根据这种方法，我们研究了氢等离子体处理对多晶硅薄膜晶体管禁带态密度的影响。
With this method, the influences of the plasma hydrogenation on the gap state density have been investigated.
根据这种方法，我们研究了氢等离子体处理对多晶硅薄膜晶体管禁带态密度的影响。
With this method, the influences of the plasma hydrogenation on the gap state density have been investigated.
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