利用真空热蒸发的方法在硅基片上制备了波导下电极；
The sub-electrode is deposited with the vacuum thermal evaporation technique;
为了验证这种方法，我们在硅基片上构造出虚拟的传输线。
To verify this method, we fabricated artificial transmission lines on a si substrate.
扫描电镜分析表明：获得的薄膜在硅基片上是光滑和致密的。
SEM studies show that on the wafer substrate, the film is smooth and dense.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
利用微波等离子体化学气相沉积(CVD)设备，在硅基片上进行了金刚石薄膜的沉积实验。
The experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition (CVD) system.
讨论了实验分光系统、成像系统和高灵敏度探测器列阵混合集成在一块三维硅基片上的初步方案。
An initiative scheme is given to integrate the spectrometer, imaging system and high sensitivity photodiode array in a three dimension silicon chip.
通过交流和直流反应溅射，我们以硅基片（表面上有白金加热电极）为基底制作H_2S气敏元件。
Through the technology of RF and DC reactive sputtering manufacture, H2S gas sensors have been developed on silicon substrate on which a heater made of Pt were attached.
采用热丝化学气相沉积法在覆盖c _(60)膜的硅基片上沉积金刚石膜，研究了金刚石膜的成核与生长。
In this paper, the diamond films were grown on the C_ (60) -coated silicon substrate by using hot-filament chemical vapor deposition technique. The diamond nucleation and growth were studied.
本文围绕射频集成电路中应用的无源硅基片上螺旋电感和有源器件砷化镓高电子迁移率晶体管进行了相关的研究，得到了一些新的结果和新的建模方法。
This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT, and obtains some new results and new modeling method.
实验结果表明，非晶硅的沉积速率与气室气压和基片温度密切相关。
Experimental results show that the deposition rate of silicon film strongly depends on silane pressure and substrate temperature.
实验结果表明，非晶硅的沉积速率与气室气压和基片温度密切相关。
Experimental results show that the deposition rate of silicon film strongly depends on silane pressure and substrate temperature.
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