掺锰硅基磁性半导体薄膜材料，锰在硅中的含量为1-10％摩尔比的薄膜材料。
The invention is a kind of manganese-doped silicon group magnetic semiconductor film material. The content of the manganese in the silicon is 1-10% mol ratio.
掺锰硅基磁性半导体薄膜材料，锰在硅中的含量为1-10％摩尔比的薄膜材料。
The invention is a kind of manganese-doped silicon group magnetic semiconductor film material. The content of the manganese in the silicon is 1-10% mol ratio.
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