空间电磁脉冲注入硅双极型晶体管后可能会导致晶体管烧毁。
Bipolar junction transistors may be burned out by injected electromagnetic pulse.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。
The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
该工艺与已有的双层多晶硅自对准NPN晶体管工艺相兼容，可用于制造高性能的互补双极电路。
The process is compatible to the existing double poly-silicon self-aligned NPN transistor process, which can be used to fabricate high-performance complementary bipolar circuits.
太平洋硅传感器的产品线包括一个标准的光电二极管，雪崩光电二极管（APD）和位置敏感探测器（PSD）的单一和双广泛轴。
Pacific Silicon Sensor's product line includes a wide range of standard Photodiodes, Avalanche Photodiodes (APD) and Position Sensitive Detectors (PSD), both single and dual axis.
太平洋硅传感器的产品线包括一个标准的光电二极管，雪崩光电二极管（APD）和位置敏感探测器（PSD）的单一和双广泛轴。
Pacific Silicon Sensor's product line includes a wide range of standard Photodiodes, Avalanche Photodiodes (APD) and Position Sensitive Detectors (PSD), both single and dual axis.
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