所述硅箔可用于形成一系列以半导体为主的器件，诸如显示电路或太阳能电池。
The silicon foils can be used for the formation of a range of semiconductor based devices, such as display circuits or solar cells.
本文介绍了半导体器件中的优质多晶硅薄膜的生长以及在生长多晶硅薄膜的同时怎样来监控淀积温度；
This paper introduces how to produce high quality polysilicon film in the semiconductor devices and how to monitor the deposition temperature at the same time when film grows.
很多工程师把纳管看作硅的替代品，当今，晶体管、二极管和其他半导体器件通常都是制作在硅这种介质上。
Many engineers see nanotubes as an alternative to silicon, the medium in which transistors, diodes and other semiconductor device structures are usually built today.
此处公开了一种使用多面体分子倍半硅氧烷形成半导体器件所用的层间电介质膜的方法。
Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane.
本文介绍了利用半导体硅材料制作的真空微电子器件的核心部件，场致发射硅锥阴极，的工艺研究及实验结果。
A process for the fabrication of Si cone cathode for the build up of vacuum microelectronic devices is proposed and its experimental results are given.
掺杂是制备硅纳米线半导体器件的一个有效手段。
Doping of silicon nanowire is one of effective means to manufacture silicon nanowire semi -conductor devices.
选择3d k2器件做辐照实验，得到了几个中子源对硅半导体辐照损伤的初步的能谱等效结果。
Some 3dk2 transistors were selected for the irradiation experiment and primary neutron spectrum equivalence results were obtained.
对硅的位错形式和运动特性的研究对于进一步提高此类半导体器件的性能提供了理论上的帮助。
The study of the dislocation structures and their moving characters in Si can help to solve the problem of improving the performance of semiconductor materials.
并主要针对在半导体器件中应用最为广泛的金-硅合金焊接失效模式及其解决办法进行了讨论。
The failure models of gold-silicon alloy bonding are discussed and some solving ways are proposed.
集成电路和各种半导体器件制造中所用的材料，目前主要是硅、锗和砷化镓等单晶体，其中又以硅为最多。
Silicon, germanium and gallium arsenide are popular materials used in ICs and semi-conduct devices, while silicon is the most popular one.
首先对RTD与化合物半导体HEMT,HBT以及硅cmos器件的集成工艺进行了介绍。
The integration technologies of RTD with HEMT, HBT and CMOS devices are first introduced.
首先对RTD与化合物半导体HEMT,HBT以及硅cmos器件的集成工艺进行了介绍。
The integration technologies of RTD with HEMT, HBT and CMOS devices are first introduced.
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