敏感器件采用三个硅光二极管阵列。
The sensing element conslsts of an array of 3 silicon optical diodes.
用一组窄带滤光片、简易辐亮度计和硅光二极管探测器设计了绝对型光谱辐亮度计。
A spectroradiometer is designed and fabricated with a set of narrow band optical filters, simplified radiometer and silicon photodiode.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
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