硅二极管阵在天文观测中的应用已日趋广泛。
Silicon diode array is more and more widely used in astronomical observation.
因此，这个传感组件由一组超薄硅二极管组成一个16x16的阵列，通过极细的导线连接。
Therefore, the detector consists of a 16-by-16 array of ultra-thin silicon diodes, connected by thin wires.
即使是在目前的早期阶段，他认为硅基的氮化镓发光二极管就已经具有商业意义了。
Yet even at this early stage he thinks gallium nitride-on silicon LEDs would make commercial sense.
每一个二极管都是从硅或者蓝宝石薄片上切割下来的。
Each diode is cut from a wafer of crystals layered over a base of silicon or sapphire.
每一个二极管都从硅(或者蓝宝石为衬底的)晶片上切割下来。
Each diode is cut from a wafer of crystals layered over a base of silicon or sapphire.
硅功率整流二极管。阴极情况。重复峰值反向电压800v。平均整流电流25a。
Silicon power rectifier diode. Cathode to case. Repetitive peak reverse voltage 800v. Average rectified forward current 25a.
本文研究了多孔硅(PS)二极管表面发射电子的特性。
The characteristics of porous silicon (PS) diodes as electron surface emitting were investigated.
硅功率整流二极管，300安培。阴极情况。最大重复峰值反向电压400v。
Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 400v.
利用光敏三极管代替硅光电池和光敏二极管来测试单缝和双缝衍射的光强分布。
This paper introduces a new method to measure the intensity distribution of single seam diffraction by replacing the silicon photocell and light activated diode with light activated triode.
用一组窄带滤光片、简易辐亮度计和硅光二极管探测器设计了绝对型光谱辐亮度计。
A spectroradiometer is designed and fabricated with a set of narrow band optical filters, simplified radiometer and silicon photodiode.
相比之下，标准硅红外光电二极管的响应比为10。
For comparison, a standard silicon infrared photo diode has a response ratio of 10.
特点是采用“反向击穿硅光电二极管”做靶面，并用快电子扫描。
The distinguishing feature of this plan is to adopt silicon backward photoelectric diode as target screen and to scan with fast electron.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
一个普通的硅整流二极管是由p - n结组成，这个结的p层是阳极。
An ordinary silicon rectifier diode consists of ap-n junction of which the player is the anode.
很多工程师把纳管看作硅的替代品，当今，晶体管、二极管和其他半导体器件通常都是制作在硅这种介质上。
Many engineers see nanotubes as an alternative to silicon, the medium in which transistors, diodes and other semiconductor device structures are usually built today.
本文介绍了采用自扫描硅光电二极管阵为探测器的光谱记录系统，以及实时数据采集系统。
This paper presents a new system for optical spectrum record, using the automatic scanning silicon photodiode array detector. The data acquisition are fulfilled in real-time.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
太阳能灯是由结晶18V间8瓦特，源10W的发光二极管，硅太阳能电池12V的22A条，等等。
The solar lights was made by crystalline 18V 8w, LED source 10W, silicon solar battery 12V 22A and so on.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
硅基材料能否实现高效发光，从而做成高效率的激光器及发光二极管等，这是人们一直追求的目标。
The people's studious aim is that the silicon materials can realize high luminescence efficiency and prepare efficient laser apparatus and LED.
实验得到硅pin光电二极管的失效阈值为1。
Experiment gives out that the failure threshold of the Si PIN diodes is 1.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
设计研制了一种集成光电探测器系统，它将光电二极管阵列及信号读出电路集成在同一硅芯片上。
An integrated photodetector system is designed and manufactured, in which the photodetector array and the read-out circuits are integrated on the same silicon chip.
敏感器件采用三个硅光二极管阵列。
The sensing element conslsts of an array of 3 silicon optical diodes.
测试结果表明，沉积六硼化镧薄膜后的二极管发射性能与纯硅尖相比具有明显增强。
The results show that thin film with deposition of LaB6 in the diode can markedly improve the emission properties compared with pure silicon tip.
在图5 - 1中所示的电路中，可控硅的栅极通过一个电阻器和二极管直接将其阳极连接。
In the circuit shown in Figure 5-1, the gate of the SCR is connected through a resistor and diode directly to its anode.
半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。
The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.
传感器敏感元件主体结构采用单晶硅的法布里帕罗标准具，并通过光纤与发光二极管和光电探测器等光学元件相连。
Sensor element, which consists of a Fabry-Perot etalon fabricated from single-crystal silicon, connects with the LED and detector by fibers.
太平洋硅传感器的产品线包括一个标准的光电二极管，雪崩光电二极管（APD）和位置敏感探测器（PSD）的单一和双广泛轴。
Pacific Silicon Sensor's product line includes a wide range of standard Photodiodes, Avalanche Photodiodes (APD) and Position Sensitive Detectors (PSD), both single and dual axis.
主要产品有：各类硅塑封整流二极管、开关二极管、高效率二极管、触发二极管、肖特基二极管、节能灯专用二极管、开关电源专用二极管。
The main products are: rectifier diodes, switching diodes, high efficiency diode, trigger diode, Schottky diode, electricity-saving lamps special diode, switching power supply special diode.
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