研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
砷化三氢的反应是典型的掺杂化学反应，图9显示了该反应的淀积过程。
Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig. 9.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
同时计算了铬离子掺杂模型的能带结构，推断出铬掺杂砷化锗镉晶体能改变晶体的能带结构，降低红外吸收。
We also calculated the model of doping cr, which can change the energy band structure of CdGeAs2, the result is valuable for decreasing optical absorption.
同时计算了铬离子掺杂模型的能带结构，推断出铬掺杂砷化锗镉晶体能改变晶体的能带结构，降低红外吸收。
We also calculated the model of doping cr, which can change the energy band structure of CdGeAs2, the result is valuable for decreasing optical absorption.
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