针对器件低内阻下的高灵敏度这一器件特性上的难题，在砷化镓霍尔传感器设计中采用非对称十字形结构。

To resolve the problem of high sensitivity of the element of low inner resistance, we design the unsymmetric cross structure for the GaAs Hall sensor.

youdao

针对器件低内阻下的高灵敏度这一器件特性上的难题，在砷化镓霍尔传感器设计中采用非对称十字形结构。

To resolve the problem of high sensitivity of the element of low inner resistance, we design the unsymmetric cross structure for the GaAs Hall sensor.

youdao