为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。
In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.
本文讨论了砷化镓双栅场效应管在电视接收机UHF频道选择器中作高频调谐放大和变频应用时的一些考虑，并给出有关的实验结果。
This paper goes into the application of the GaAs Dual-Gate FET to the high frequency tuning-amplification and frequency conversion in a TV UHF channel selector and gives some experimental results.
本文讨论了砷化镓双栅场效应管在电视接收机UHF频道选择器中作高频调谐放大和变频应用时的一些考虑，并给出有关的实验结果。
This paper goes into the application of the GaAs Dual-Gate FET to the high frequency tuning-amplification and frequency conversion in a TV UHF channel selector and gives some experimental results.
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