用电子显微镜研究了压痕诱发砷化镓单晶中的塑性变形。
Plastic deformation induced by indentation in a GaAs single crystal was investigated using electron microscopy in the present experiment.
为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。
To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.
常用的本质半导体是硅、锗以及砷化镓等的单晶。
Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide.
集成电路和各种半导体器件制造中所用的材料，目前主要是硅、锗和砷化镓等单晶体，其中又以硅为最多。
Silicon, germanium and gallium arsenide are popular materials used in ICs and semi-conduct devices, while silicon is the most popular one.
集成电路和各种半导体器件制造中所用的材料，目前主要是硅、锗和砷化镓等单晶体，其中又以硅为最多。
Silicon, germanium and gallium arsenide are popular materials used in ICs and semi-conduct devices, while silicon is the most popular one.
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