本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。
In this paper, the design principles and methods of the super-abrupt junction GaAs varactor diode has been discussed.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
黄河源彩色设备均采用砷化镓磷化镓磷化物黄色发光二极管。
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
高效率红源彩色设备均采用砷化镓磷化镓磷化物的橙色发光二极管。
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
高效率红源彩色设备均采用砷化镓磷化镓磷化物的橙色发光二极管。
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
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