铁电场效应晶体管（FFET）存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
在经过破坏性读出之后，立即将数据重新写入存储器的操作。
To write data back into memory immediately after a destructive readout.
这种晶体管的阈值电压窗口约17伏，且具有不破坏的读出特性。
Threshold voltage window is approx 17V, and this transistor has nondestructive readout characteristic.
当有电荷泵效应存在时，浮置扩散放大器就不是非破坏性电压读出。
With such an effect, floating diffusion amplifier can not be taken as a nondestructive voltage sensor of a signal.
电阻型随机存储器（RRAM）以其运行速度快、功耗低和非破坏性读出等特性，被预期为理想的新一代非易失存储器。
Resistive random access memory (RRAM) is anticipated to be the promising next generation non-volatile memory operating with fast switching speed, low power consumption and nondestructive readout.
电阻型随机存储器（RRAM）以其运行速度快、功耗低和非破坏性读出等特性，被预期为理想的新一代非易失存储器。
Resistive random access memory (RRAM) is anticipated to be the promising next generation non-volatile memory operating with fast switching speed, low power consumption and nondestructive readout.
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