阴极是真空微电子器件的核心部件之一。
Cathode is one of the core components of vacuum microelectronic devices.
本文介绍了真空微电子器件场发射金属尖阵列阴极的制备工艺技术。
This paper describes a fabrication technology of metal tip field emission arrays (FEA) for the vacuum microelectronic devices.
场发射阴极作为各种真空微电子器件的核心，其性能的好坏将直接决定着场发射器件的总体性能。
The whole performance of device depends on the capability of field emitting cold cathodes which act as the kernel of all kinds of vacuum micro-electronics device.
真空微电子器件相对于半导体器件来说，有着更高的工作频率和输出功率，正常工作温度范围也相对较大。
Compared with semiconductor devices, vacuum microelectronic devices can work with higher frequency and larger power at a wider range of temperature.
本文介绍了利用半导体硅材料制作的真空微电子器件的核心部件，场致发射硅锥阴极，的工艺研究及实验结果。
A process for the fabrication of Si cone cathode for the build up of vacuum microelectronic devices is proposed and its experimental results are given.
以场致发射理论为基础的真空微电子器件，因其具有功耗低、电流密度大、频率高等诸多优点而倍受人们关注。
Vacuum micro-electronics devices, which are based on field emission theory, are more and more widely applied, because of their low power consumption, high current density and high frequency.
以场致发射理论为基础的真空微电子器件，因其具有功耗低、电流密度大、频率高等诸多优点而倍受人们关注。
Vacuum micro-electronics devices, which are based on field emission theory, are more and more widely applied, because of their low power consumption, high current density and high frequency.
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