采用直流磁控溅射法溅射纯度为99.999%的铝靶制备了超薄铝膜。
Ultrathin aluminum films were prepared by DC reactive magnetron sputtering. The target was made by 99.999% pure aluminum.
获得了直流磁控溅射法制备具有良好光电特性的ZMO薄膜的最佳工艺条件；
The experimental condition of DC magnetron sputtering for ZMO films with good optical and electric properties has been established.
采用直流磁控溅射法在清洁玻璃基片上制备了掺钨氧化铟（IWO）透明导电氧化物薄膜。
Transparent conductive, tungsten-doped indium oxide(IWO) films with the high carrier molbility were grown by magnetron sputtering on glass substrates, followed by in-situ annealing.
用热等静压法烧结制备了高导电性ZAO（铝掺杂氧化锌）陶瓷靶材，并用直流磁控溅射法制备出ZAO透明导电薄膜。
Aluminum-doped zinc oxide (ZAO) ceramic targets for sputtering were fabricated by hot isostatic pressing (HIP) and ZAO transparent conducting thin films were prepared by dc magnetron sputtering.
用热等静压法烧结制备了高导电性ZAO（铝掺杂氧化锌）陶瓷靶材，并用直流磁控溅射法制备出ZAO透明导电薄膜。
Aluminum-doped zinc oxide (ZAO) ceramic targets for sputtering were fabricated by hot isostatic pressing (HIP) and ZAO transparent conducting thin films were prepared by dc magnetron sputtering.
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