研究了高温快速热处理（RTP）对重掺砷直拉硅片中的原生氧沉淀的消融作用。
The annihilation of grown-in oxygen precipitates in heavily As-doped CZ silicon by rapid thermal processing (RTP) was investigated.
集成电路特征线宽的不断减小对直拉（CZ）单晶硅片中的缺陷控制和内吸杂技术提出了愈来愈高的要求。
The ever-smaller feature size of integrated circuit imposes on increasingly stringent requirements on the defect control and internal gettering(IG)capability of Czochralski(CZ)silicon wafers.
采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.
采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.
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