此外，掺氮对直拉硅氧沉淀熟化的影响还有待揭示。
Moreover, the effect of nitrogen-doping on the Ostwald ripening of oxygen precipitates is yet to be revealed.
将快速热处理（RTP）引入到快中子辐照掺氮直拉硅的内吸杂工艺中。
Rapid thermal process (RTP) was used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.
首次将快速热处理（RTP）引入到快中子辐照直拉硅的内吸杂工艺中。
Rapid thermal process (RTP) was first used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.
用高频光电导衰减法（PCD）研究了热氧化钝化对直拉硅少子寿命的影响。
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
直拉法生长单晶硅是目前最常用最成熟的工业化方法。
Growth of Czochralski silicon crystals is the most common and perfect one in industry.
最后，讨论了原生直拉单晶硅中铜沉淀规律的机理。
Finally, the mechanism of copper precipitation in as-grown Czochralski silicon is discussed.
文中应用模拟电路、微机控制技术实现了对控温精度要求很高的直拉单晶硅炉温度控制系统的设计。
The design of the single crystal furnace temperature control system is realized by analog electronic, microcomputer unit control skills.
介绍了直拉法生长单晶硅的基本原理及工艺条件。
This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.
多晶硅用直拉法(CZ)或磁场直拉法(mcz)拉制成单晶硅棒。
Silicon single crystals are produced mainly by Czochralski method (CZ) and magnetic field app-lied Czochralski method (MCZ).
TDR—JN系列全自动晶体生长炉是采用直拉法生长单晶硅材料的专用设备。
Introduction: TDR-JN series of automatic crystal growing furnace are special equipment applied with Czochralski Technique for Silicon Single crystals materials growing.
第二章详细论述了一种新型的微梁直拉直压硅微机械压阻式加速度传感器的工作原理。
In Chapter 2, the operation scheme of a micromachined piezoresistive accelerometer with axially deformed tiny beams is studied in details.
第二章详细论述了一种新型的微梁直拉直压硅微机械压阻式加速度传感器的工作原理。
In Chapter 2, the operation scheme of a micromachined piezoresistive accelerometer with axially deformed tiny beams is studied in details.
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