测量和计算表明，这种界面电阻值是很小的。
Measurement and calculation show that its value is very small.
爆炸复合材料的界面电阻，是用其制作的异种金属导电过渡接头的一项重要的技术指标。
Interface resistance of explosive composite materials, which are used to produce different kinds of metal electric transit point, is an important technique target.
具有如此小的界面电阻值的过渡电接头，在电力、电子和电化学工业中有很大的应用价值。
It has high application value in electrical, electronic and electrical chemistry industry because of its small value of interface resistance at transit electrical point.
薄膜电阻率随退火温度的变化行为与薄膜微观结构的变化以及界面扩散有关。
The annealing behavior of the resistivity is correlated with the microstructure and interfacial diffusion of the films.
非均匀颗粒系统呈现的磁电阻效应与电子在两相颗粒界面的自旋相关散射有关。
The room magnetoresistance effect is largely enhanced in such an inhomogeneous granular system due to the spin dependent scattering of electrons at the interface of the two phases.
采用X射线光电子能谱(XPS)对比分析纯氧化锌陶瓷和氧化锌压敏电阻的界面特性。
Analyzed were the characteristics of interface of both ZnO varistor and pure ZnO ceramic by X-ray photoelectron spectroscopy (XPS).
不同薄膜的界面传输电阻和电子在薄膜内的传输时间明显不同；
There were different interface transfer resistance and transmission time of electrons of different thin films.
该机除了靓丽的外形和超大的触屏外，电阻式的华丽触屏和时尚的界面也给大家留下了深刻的印象。
Apart from the beautiful shape of the aircraft and the large touch screen, the resistive touch screen and fashion of beautiful interface also give you left a deep impression on him.
接头界面有效连接面积和接头上引线横截面变形量的变化分别是造成接头电阻波动性和整体增大趋势的原因。
The real contact area of the bond interface and the cross-sectional deformation of the bond wire were the causations respectively for the fluctuation and wholly increase of the resistance.
研究了中间绝缘层厚度、界面状况及反铁磁层钉扎对隧穿磁电阻的影响。
The effects of barrier thickness, interface and anti-ferromagnetic pinning on the TMR values of the MTJs have been studied.
这个硅化物界面层诱导了三明治膜的平面内磁各向异性，从而导致了易轴上高灵敏度巨磁电阻效应。
The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.
磁电阻的本征效应和传导电子在界面处的自旋相关散射作用是产生室温下增强磁电阻效应的主要原因。
The enhancement of MR effect at room temperature was mainly related to the coexistence of intrinsic MR properties and the spin dependent scattering of conduction electrons at the interfaces.
磁电阻的本征效应和传导电子在界面处的自旋相关散射作用是产生室温下增强磁电阻效应的主要原因。
The enhancement of MR effect at room temperature was mainly related to the coexistence of intrinsic MR properties and the spin dependent scattering of conduction electrons at the interfaces.
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