虽然这些技术提供了杰出的方法来描述系统行为，但是它们不能传达真实的用户环境和界面需求的足够信息。
Although these techniques provide an excellent means to describe system behavior, they cannot convey adequate information on real users' environments and interface needs.
例如，一个应用我们所描述的方法的焦点是RUP工件用户界面原型。
For example, one focal point for applying the approach we have described is the RUP artifact User Interface Prototype.
这种方法还会使整个用户界面是可配置的，而且在XML文件中描述的GUI布局与应用程序代码分开。
This approach also makes the whole user interface configurable, with the GUI layout being described in an XML file separate from the code of the application.
但是现有的软件工程方法缺少对用户界面设计描述的直接支持，制约了图形用户界面的开发效率和质量。
But the now existing software engineering technology lacks the direct support for UI design description, and this has limited the efficiency and quality of graphical UI development.
描述了该仿真模型的功能、计算方法和部件模块设计及程序运行界面。
The functions, calculation method, component module and program running interface of this simulation model are introduced.
本文着重介绍了人机界面原型环境的规范描述，构造方法和总体设计。
This paper introduces the normal description of UIPE as well as its construction method and global design.
针对标定甲台，引入标定变量描述文件，设计了友善的用户界面，并用地址绑定的方法实现了标定数据的准确传递。
For the calibration platform, the paper introduces the description file of calibration variables, designs friendly interfaces and facilitates data exchanging by means of address binding.
但是现有的软件工程方法缺少对用户界面设计描述的直接支持，制约了图形用户界面的开发效率和质量。
But now, software engineering technology lacks the direct support for UI design description, and this has limited the efficiency and quality of graphical UI development.
本文描述一种基于属性文法并结合事件模型的用户界面规格说明方法。
This paper describes an approach to specify user interfaces using an at tribute grammar combined with an event model.
但一般用户界面的抽象描述方法主要针对界面的布局和风格，缺乏对用户界面交互行为描述的支持。
But general methods for user interface description are mainly used to specify the layout and style of user interface. Few provide support to specify dynamic behaviors.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
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