氧化控速过程为“界面反应和扩散混合控制过程”。
The oxidation control factor is "the mixed control of interface reaction and diffusion".
研究了在铜粉和镍粉反应形成固溶体组织的过程中，影响铜粉和镍粉界面扩散和迁移的因素。
The affecting factors on interface diffusion and migration of Cu and Ni powders have been investigated during the process of Cu Ni solid solution which be formed by reaction of Cu and Ni powders.
其连接机理为烧结过程中母材与连接材料间的扩散反应，以及界面处颗粒间的相互镶嵌。
The joining mechanism were diffuse reaction between matrix and joined materials and particles inlaying each other in the joint.
设计了一个数值模型来模拟一个反应物在明胶层中边扩散边在油珠界面上与另一个反应物反应的动力学过程。
A numerical model was designed to simulate the kinetic process of diffusion and reaction of one reactant with another on the interface of droplets in a gelatin layer.
还原WO3的限制性环节是WO3在熔渣中的扩散，改善渣的流动性，扩大反应界面能加快WO3的还原；
The diffusion of WO3 is the restrictive step of reduction process of WO3. Improving fluidity of slag and enlarging areas of reaction interface can accelerate reduction process of WO3.
重点介绍了以界面反应为主、扩散为主的反应机理和活度控制的金属相变机理。
And the paper emphasized on the interface reaction mechanism, diffusion mechanism and metallic phase transformation mechanism which is controlled by activation.
结果表明，炉管的氧化机理主要是金属离子穿过氧化物层的扩散并在氧化物—气体界面发生反应。
The results show that oxidizing mechanism of the heater tube is mainly diffusion of metal ion passing through oxide and its reaction at the oxide-gases boundary.
因此钎焊过程和服役过程中界面的反应、扩散以及界面的微观组织对当前无铝钎料可靠性研究具有重大意义。
The research on element interdiffusion, reaction and microstructure at the interface of solder joints is vital to the study of lead free solder joints reliability.
实验数据与界面化学反应和固体产物层内扩散共同控制数学模型相吻合。
The experimental data were fitted to a mathematical model of joint controlled by the chemical reaction at the interface and diffusion of steam through the product layer.
应力试验后的样品，肖特基势垒接触界面模糊，有明显的互扩散和反应发生．。
The AES suggests that the interaction between gate metallization and GaAs active layer has taken place and the Schottky contact interface becomes ambiguous after stressing.
应力试验后的样品，肖特基势垒接触界面模糊，有明显的互扩散和反应发生．。
The AES suggests that the interaction between gate metallization and GaAs active layer has taken place and the Schottky contact interface becomes ambiguous after stressing.
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