论述了提取混合信号集成电路衬底电路模型的格林函数法。
The Green function method used for the extraction of the substrate model in mixed-signal integrated circuits is discussed in this paper.
方形光二极管阵列包括四个集成在通用磷化铟（InP）衬底上的光二极管单片集成电路，采用低制造、集成与测试率的铟镓砷化物/磷化铟半导体工艺制造。
The Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.
本文在分析MOSFET衬底电流原理的基础上，提出了一种新型抗热载流子退化效应的CMOS数字电路结构。
Based on analysis of the principle of substrate current of MOSFETs, a new hot carriers resistant structure of CMOS digital circuits is proposed.
所述第一像素包括覆盖在所述衬底上方的第一像素驱动电路，并包括第一电子部件。
The first pixel includes a first pixel driving circuit that overlies the substrate and includes a first electronic component.
讨论了高频辉光放电等离子体系统中绝缘衬底表面的自负偏压问题，用等效电路方法给出了自负偏压的数学解析。
Selfnegative bias on insulate substrate surface of rf glow discharge plasma reactors is studied theoretically. The mathematical analysis has been obtained by equivalent circuit method.
衬底噪声耦合是深亚微米混合信号集成电路中常见的噪声干扰效应，严重地影响了模拟电路的性能。
Substrate noise coupling effect often occurs in the DSM mixed signal ICs, which seriously interferes the normal performance of the analog circuits.
从仿真的数据结果，我们可以清楚地认识到衬底寄生电阻所带来的衬底电压的不稳无论在数字电路还是模拟电路中都会产生一定的影响。
From the simulation data, we can clearly observe the instability of substrate voltage, caused by substrate resistor, will cause some trouble in both analog and digital circuit.
在文章中，我们在现有的MOS器件模型的基础上再组建一个寄生的衬底模型，然后利用此模型逐一对单个MOS器件，具有累积效应的数字电路和部分基本模拟电路进行了仿真实验和分析。
In the article, we make a parasitic substrate model on the existing MOS model, and use this model to do simulation for each single MOS, accumulated effect circuit and some useful analog circuit.
电路采用了预启动和衬底电位选择结构，并利用三相时钟信号方式控制电荷泵的工作状态。
The latest three-phase clock signal control method was used to control the working state of charge pump.
针对高损耗衬底，基于复镜像理论，结合部分元等效电路法，建立了一种新的片上互连线物理模型。
A new physical model for on-chip interconnect on high lossy substrate is proposed based on complex image theory and PEEC.
通过对低压低功耗集成电路设计技术的分析，着重设计了一个基于衬底驱动技术的CMOS带隙基准电压源，其带有提高电源抑制比电路和启动电路。
CMOS bandgap voltage reference with low voltage based on the bulk driven technology is designed in this paper, with circuit to improve PSRR and start-up circuit.
这些测量包括半导体衬底上的各位置处的温度和IR降、以及集成电路的频率响应。
These measurements include temperature and ir drop at locations on the semiconductor substrate, along with the frequency response of integrated circuit.
可在包括读出电路的第一衬底上方形成布线和层间介电层。
A wiring and interlayer dielectric layer may be formed over the first substrate including the readout circuit.
通过对低压低功耗集成电路设计技术的分析，着重设计了一个基于衬底驱动技术的CMOS带隙基准电压源，其带有提高电源抑制比电路和启动电路。
A CMOS bandgap voltage reference with low voltage based on the bulk driven technology is designed in this paper, with circuit to improve PSRR and start-up circuit.
一种自供电低功耗集成电路芯片，其特征在于，该芯片包括一个半导体衬底以及在该衬底上的低功耗集成电路和太阳能电池；
The invention belongs to the technical field of integrated circuits, in particular to a self-powered low power consumption integrated circuit chip and a preparation method thereof.
一种用于阵列器件的晶体管电路包括并联电连接且设置在同一衬底上的多个薄膜晶体管。
A transistor circuit for an array device comprises a plurality of thin film transistors electrically connected in parallel and provided on a common substrate.
在一种可替代的电路中，每个负载器件(M3,M4)的衬底都与它的漏极相连，并且被偏置在弱反型区工作。
In an alternative circuit, each load device (M3, M4) has its bulk connected to its drain and is biased to operate in the weak inversion regime.
研究混合信号集成电路中衬底噪声耦合反衬底噪声对模拟／数字电路的影响。
The substrate noise fundamental and its effect on the mixed-signal IC is introduced briefly.
研究混合信号集成电路中衬底噪声耦合反衬底噪声对模拟／数字电路的影响。
The substrate noise fundamental and its effect on the mixed-signal IC is introduced briefly.
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