特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
这一特性使它比磁存储器的速度更快，因磁存储器中的二进制数字(比特)是由磁极化区而不是由电荷表示的。
This has allowed them to be much faster than magnetic memory, in which the binary digits (" bits ") are represented by magnetically polarised regions rather than electric charges.
提出一种适用于NOR结构快闪存储器应用的，具有大驱动能力、低功耗和高精度特性的电荷泵系统。
A novel positive charge pump for NOR flash memory with high driving capability, high precision and low power consumption, is proposed in this paper.
在用于对读取周期中读取位线上的剩余电荷放电的半导体存储器装置中，位线在除读取操作期间以外的全部时间均处于复位状态。
In a semiconductor memory device operative to discharge residual charge in a read bit line in a read cycle, the bit line is in the reset state at all times except during read operation.
一种电荷陷获非易失存储器单元的阵列，排列为多列单元，且每一列为串联安排，如NAND串。
An array of charge trapping nonvolatile memory cells is arranged in several columns of cells, each arranged in a series, such as a NAND string.
研究表明，单电子环形存储器单元电路利用量子点环状电路结构形式，由外接输入电压控制各岛上的电荷，能够得到存储器的“0”和“1”状态。
It is shown that the two states('0' and '1') of single-electron ring memory, which has a cyclic array of quantum dots, can be implemented by input voltage controlling the charges on the islands.
该只读存储器有效增加电荷陷阱，提高电路设计和信号处理的灵活性。
The read-only memory can efficiently increase charge traps, improve the flexibility of circuit design and signal processing.
当存储器单元结构的其它部分储存不相关的信息时，读取作业将不同部分的电荷捕捉结构之间的耦合减少。
When the other parts of the memory cell stores irrelated information, read operation reduces the coupling between charge capturing structures of different parts.
动能存贮器：需经常或永久充电的一种电脑存贮器。例如阴极射线管存储器。若电荷逐渐减少，信息就会消失。 收藏。
Dynamic memory: Computer memory that will degrade in time if a power source is not permanently or frequently applied. For example:CRT storage.
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
通过在存储器单元的衬底区域与存储器单元的源极区域及存储 器单元的漏极区域中至少一个之间测量电流，来操作一种具有电荷捕 捉结构的存储器单元。
The invention operates a memory cell with charge capturing structure by measuring the current between substrate region and at least one of the source and drain regions of the memory cell.
通过增加存储器单元上的净正电荷以擦除存储器单元，而通过增加存储器单元上的净负电荷以编程存储器单元。
By increasing net positive charges on the memory cell, it erases the memory cell and by increasing net negative charges on the memory cell, programs the memory cell.
通过增加存储器单元上的净正电荷以擦除存储器单元，而通过增加存储器单元上的净负电荷以编程存储器单元。
By increasing net positive charges on the memory cell, it erases the memory cell and by increasing net negative charges on the memory cell, programs the memory cell.
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