最后讨论了控制铁电畴结构的工艺措施。
Finally, the technological methods to control the domain structures were discussed.
铁电体是一类重要的功能材料，电畴是其物理基础。
Ferroelectrics based on ferroelectric domains is one of the most important functional materials.
采用电脉冲极化方法制作出周期性反转电畴微结构。
The microstructure of periodical reversal ferroelectric domain was produced by means of the electric impulse polarization.
铁电薄膜是一类重要的功能材料，铁电畴是其物理基础。
The piezoresponse force microscopy(PFM) is a useful method to study ferroelectric domains of ferroelectric films.
本文用朗道自由能展开研究了有电畴的铁电薄膜的相变特性。
The phase transition characteristics of ferroelectric films with domain structure were studied using Landau free energy expansion.
第二部分，对铁电陶瓷中电畴反转引起的宏观本构响应进行了研究。
In the second part, the macroscopic constitutive behavior of ferroelectric ceramics induced by domain switching is investigated.
铁电畴图像复杂的畴衬度与晶粒中的畴排列和晶粒的取向密切相关。
Complex domain contrast is related to the arrangement of domains in grains and to the orientation of the grains in the film.
这种光诱导剩余极化减小的疲劳，主要机理是光生载流子电畴钉扎。
The optically induced polarization fatigue in SBTN films is due to trapping of photo-generated charge carriers at domain boundaries.
压电响应力显微镜为铁电薄膜电畴的研究提供了一种有效的检测方法。
The piezoresponse force microscopy(PFM) is a useful method to study ferroelectric domains of ferroelectric films.
对紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转进行了实验研究。
Ultraviolet laser-induced ferroelectric domain inversion in nearly-stoichiometric LiTaO3 was investigated.
本文就纳米尺度铁电畴的扫描力显微镜的成像原理的研究进展作一综述。
This review is involved with the latest progress in the imaging principle of nanoscale ferroelectric domain via SFM.
利用热腐蚀法制备出用于环境扫描电镜（ESEM）研究反转电畴结构的样品。
The samples used for examining the reversal domain with ESEM were prepared by heat erosion.
本论文利用扫描力显微镜研究了铁电薄膜表面与界面的电势及电畴等微区性质。
In this thesis, Scanning Force Microscopy (SFM) was used to study the nanoscale electric phenomena of the surface and interface properties of ferroelectric thin films.
本发明是一种用于铁电晶体表面电畴结构检测的静电微粒显示剂及其检测方 法。
The invention is a static particle displaying agent for detecting ferroelectric crystal surface electric domain structure and the detecting method thereof.
本文运用KA模型研究了铁电薄膜的电畴反转特性与外加电场强度以及温度的关系。
The dependence of domain reversal characteristics of the ferroelectric thin film on external electric field and temperature is investigated by using the KA model.
发现薄膜中晶粒的结晶取向、晶粒大小和晶粒边界条件直接影响其电畴的形态复杂程度。
It was revealed that the crystallographic orientation, dimensional sizes and boundaries of ferroelectric grains significantly affect the domain structures of thin films.
制备粗晶粒及单个晶粒厚的抛光薄片，利用十字形电极，观察在电场作用下，电畴运动的动态过程。
Large grain sized specimens, polished monograin thick slices and cross electrodes are prepared for observing the dynamic processes of domain movement.
本质上，电泡是铁电薄膜中电畴所承受的压缩力与扩张力稳定平衡的结果，是电畴的一种稳定结构。
Radically, electronic bubble is a result of stabilization of electronic domain structure in feroelectronic film bettwen compression force and dilation force.
烧结前后陶瓷相结构明显改变，由原来的立方顺电相为主转变为四方铁电相为主，并存在铁电畴亚结构；
The major phase constituent obviously transforms from cubic paraelectric phase to tetragonal ferroelectric phase after sintering, in which the ferroelectric domains exist.
而通过外加电场极化的方法，获得非线性晶体铁电畴反转光栅，是目前普遍采用，且被证明非常有效的方法。
Electrical polarizing method is the most easy and effective way, which can get ferroelectric domain on non-linear crystal, in all methods of QPM technology.
结果表明：利用扫描电子声显微镜技术在不对样品表面进行任何处理的情况下，可以直接对电畴结构进行观察。
The results show that the SEAM technique can be used directly to observe the domain structure of ferroelectric ceramics and single crystal materials without any treatment for test samples.
它不但可以阻止畴壁的移动，还可以形成于外场方向相反的畴核，并且畴核在外场作用下不断扩张，直至电畴翻转。
The nucleation domains that are opposite to the direction of the applied electric field, and their formations are ascribed to the grain boundaries which also impede domain-wall movement.
数值计算表明，不论是二维还是三维铁电系统，其铁电畴反转过程中产生的开关电流都随系统尺寸减少而下降，开关时间随系统尺寸减少而缩短。
Computational results indicate that, for both systems, the switching current drops with decreasing system size and the switching time shortens as the system size decreases.
实验研究表明，铁电陶瓷的高频介电弛豫主要是由材料内部的畴壁共振引起的。
The results indicate that high frequency dielectric relaxation of the ferroelectric ceramics is caused by piezoelectric resonance of domains.
材料的介电损失一般认为由畴界移动和电传导两个机制造成的。
The dielectric loss of this material is considered to be caused by the motion of domain boundaries and electric conductions.
同时我们还测量到了铁电纳米微畴的反转引起的力学响应，这与其介电响应结果是一致的。
Mechanical response induced by the relaxation of nano-domains has been observed as well, which is consistent with dielectric measurements.
同时我们还测量到了铁电纳米微畴的反转引起的力学响应，这与其介电响应结果是一致的。
Mechanical response induced by the relaxation of nano-domains has been observed as well, which is consistent with dielectric measurements.
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