基于SOS效应工作的半导体断路开关可以在纳秒级时间内关断大密度电流，因此可应用于电感储能的脉冲功率发生器。
Based on Semiconductor Opening switch (SOS) effect, the SOS can switch off current of great density within nanoseconds, which is applied to pulse power generator of inductive energy storage.
利用一个由恒流脉冲发生器和数据采集卡组成的简单测试系统测得制冷器在小电流下的电阻电压和塞贝克电压，通过这两个电压推导出ZT值、最大制冷温差。
The resistance and Seebeck voltages used to calculate the ZT and the maximum temperature difference are measured using a testing system composed of a DC pulse generator and a DAQ card.
设计和制作了能够产生纳秒级脉冲电流的纳秒脉冲发生器。
The nanosecond impulser is designed and fabricated to output nanosecond pulse current.
本文采用UC 3846作为PWM发生器，桥式驱动的脉冲变压器既保证信号的传输，又保证足够功率驱动全桥逆变主电路。对于经常发生短路刷镀刷镀工艺，快速过电流保护非常必要。
UC3846 is used for PWM, pulse transformer driven by bridge can transfer signal and power for IGBT in main circuit, quick protection is necessary for short circuit often happen during brush plate.
本文采用UC 3846作为PWM发生器，桥式驱动的脉冲变压器既保证信号的传输，又保证足够功率驱动全桥逆变主电路。对于经常发生短路刷镀刷镀工艺，快速过电流保护非常必要。
UC3846 is used for PWM, pulse transformer driven by bridge can transfer signal and power for IGBT in main circuit, quick protection is necessary for short circuit often happen during brush plate.
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