外尔只是发表了一篇粗糙的陈述，声明空穴必须具有与电子相同的质量，而没有对这份断言作出任何具有物理含义的评论。
Weyl just published a blunt statement that the holes must have the same mass as the electrons and did not make any comments on the physical implications of this assertion.
当光子以充足的能量轰击硅就产生了电子空穴对。
When photons with sufficient energy strike the silicon they create pairs of electrons and holes.
电子和空穴注入高分子膜所形成的界态称为电子空穴对，电子空穴对冲破电流的阻碍，于是便产生了光。
Electrons and holes injected into the polymer film form bound states called excitons that break down under electrical current, emitting light as they do so.
然后对不同应力电压、不同沟道长度下氧化层陷阱电荷（包括空穴和电子陷阱俘获）的产生做了进一步的分析。
Thus, the relationships of oxide charge generation, including electron trapping and hole trapping effects, with different stress voltages and channel lengths are analyzed.
通过哈密顿量矩阵的对角化，对电子和空穴间的库仑相互作用进行了精确处理。
The Coulomb interaction between the electron and the hole is treated accurately by the direct diagonalization of the Hamiltonian matrix.
提出了腐蚀机理，光照激发位错处产生电子空穴对，加速位错处的腐蚀速率。
It is also demonstrated that the light source induces electron-hole pairs and enhances the etching rate at the dislocation sites.
流经硒层的X射线光子产生电子空穴对。
X-ray photons flowing through the selenium layer create electron hole pairs.
利用衬底热空穴注入技术分别控制注入到薄栅氧化层中的热电子和空穴量，对相关击穿电荷进行了测试和研究。
Charge to breakdown of the thin gate oxides was tested and investigated by controlling the amounts of injected hot electrons and holes separately with substrate hot holes injection method.
利用衬底热空穴注入技术分别控制注入到薄栅氧化层中的热电子和空穴量，对相关击穿电荷进行了测试和研究。
Charge to breakdown of the thin gate oxides was tested and investigated by controlling the amounts of injected hot electrons and holes separately with substrate hot holes injection method.
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