为了研究MOS结构的电子辐照效应，采取了能量为0。
For the sake of researching of radiation effect of MOS structure irradiated by electron, we adopted 0.
结合太阳电池理论和半导体材料的电子辐照效应给出了合理的解释。
This result has been explained properly by combined with theories of solar cell and electron irradiation effect of semiconductor.
因此在这个电子通量范围内，采用加速地面试验来模拟空间的电子辐照效应是有效的。
Accordingly, in this range the accelerated ground-based testing to simulate electron exposure effects of space is validated.
用正电子湮没寿命测量方法研究了在中子辐照硅单晶缺陷中正电子捕获的温度效应。
A method of measuring positron lifetime is used to investigate temperature dependence of positron trapping at defects in neutron-irradiated silicon crystals.
为研究静电放电电磁脉冲对电子系统的影响，进行了静电放电电磁脉冲对单片机系统的辐照效应实验。
To study the effect of ESD EMP on electronic system, we carry out the experiment of ESD EMP on chip microcomputer.
为研究静电放电电磁脉冲对电子系统的影响，进行了静电放电电磁脉冲对单片机系统的辐照效应实验。
To study the effect of ESD EMP on electronic system, we carry out the experiment of ESD EMP on chip microcomputer.
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