当科学家在探针上加一定电压时候，电子能够在它和样品表面之间跳跃，这个过程叫做量子隧穿。
When scientists apply a voltage to the finger, electrons can hop between it and the surface through a process called quantum tunneling.
通过电子尝试隧穿这一过程，我们不仅可以观察到原子与纳米管之间的相互作用，还可以一窥发生在纳米量级上的动力学效应。
We can observe the interaction of the atom and the nanotube as the electron is trying to tunnel, and this offers us a chance to peek at some of the interesting dynamics that happen at the nanoscale.
量子隧穿还是扫描隧道电子显微镜的一大特色。这是第一种能够拍摄和操作原子的显微镜。
Quantum tunneling is also a key feature of the scanning tunneling microscope, the first machine to enable the imaging and manipulation of individual atoms.
第六章中我们有选择的控制电子在点链中的隧穿而不是简单的将其局域在初始点中。
In chapter six, we control the tunneling of electrons in the quantum dot array selectively rather than only localizing them in their initial state.
研究了电子的自旋相关的隧穿和极化。
The electron spin dependent tunneling and susceptibility are studied.
高场下的电子过程主要有隧穿效应及过热电子的有关行为。
Tunnel Effect and the different behaviors of hot electrons consist of the main electronic processes under high electric field.
最后，我们的模拟发现，普通soi结构SBSD - MOSFET能有效阻挡来自源结的热电子发射泄漏电流，但仍不能阻挡来自漏结的隧穿泄漏电流。
Finally, our simulation result shows that conventional SOI SBSD-MOSFET can effectively suppress thermionic emission leakage current, but it still can not suppress tunneling leakage current.
以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
我们研究了双层二维电子气中的自旋霍尔电导率以及隧穿自旋流。
We study the spin Hall conductivity and tunneling spin current in the bilayer two-dimensional electron gas.
数值模拟结果给出这类电子器件的量子极限——可观察到共振隧穿现象的量子阱宽度的限度。
The numerical simulation results show the quantum limit of the quantum well width, beyond which will observe the resonant tunneling phenomena.
进一步指出，这些峰来自于电子共振隧穿量子结构中的量子束缚态。
Furthermore, these peaks are due to the resonant tunneling via bound states in the quantum structure.
对侧向表面磁超晶格结构中电子的隧穿输运现象作了深入系统的研究。
We have made systematically study on tunneling transport of electrons in lateral surface magnetic superlattices.
本文研究了三元准周期超晶格的电子共振隧穿性质。
The resonant tunneling of three-tile quasiperiodic superlattices has been investigated in this paper.
本文从单带双谷模型出发研究了电子在量子阱内遭到散射时电子状态及隧穿几率的变化。
The electron states and tunneling transmission probability for a double barrier heterostructure system containing scattering centers are solved by using the single-band double-valley theory.
此时单个电子与场相互作用的微扰描述可以用隧穿描述取代。
Then the perturbative description of the interaction between a single electron and the laser field can be replaced by the tunneling ionization.
制备了含两层绝缘层的双势垒结构隧道发光结，介绍了其结构特点，分析了电子在结中的共振隧穿特性。
The double-barrier light emission tunnel junctions have been fabricated. The characteristics of electronic resonant tunneling with the junctions have been analyzed.
研究了零电场和正弦电场作用下的磁量子结构中自旋电子的隧穿输运特性。
Properties of tunneling transmission in magnetic quantum structures have been analysed based on Schr dinger equation both in zero electric field and in sinusoidal one.
发现器件的栅电流不是由单一的隧穿引起，同时还有电子的翻越和渗透。
The gate current is produced by the tunneling, the electron surmounting and percolation.
给出了在矩形势垒区存在电场作用时，隧穿电子波函数的形式解。
A formal solution for the wave functions of the tunneling electrons through a rectangular barrier under the electric field is given.
在正统理论的基础上 ，提出了单电子三势垒隧穿结模型的主方程 ，并用线性方程组解法求出了其稳态解 。
The master equation of the single electron triple barrier tunnel junction(TBTJ) model is developed based on the orthodox theory.
发现在高电子密度下电子会向量子限制较弱的退局域态转移。同时还经由热电子隧穿而跃迁到表面态。
It is found that the electrons may be transferred into delocalized states with high energy and transited to surface states through hot electron tunneling under high electron concentration.
利用第一原理密度泛函理论计算组装C60形成能和电子结构，用半经典隧穿理论研究了串联C60的电子输运特性。
The formation energy and electronic structures of the series-connected C60 molecule are calculated by the ab initio density–functional theory.
因此对一个元件设计者而言非常不容易预测及厘 清单电子电晶体及分子电晶体的穿隧电流，从而 使得奈米元件电路难以成真。
Consequently, it is hard for designers to predict and clarify the tunneling current of SETs (MTs), making the realization of nano- device circuit extremely difficult.
电子在元件中利用量子穿隧效应流动，少量的电子可穿过绝缘层的障碍到达另一边。
Current flows through the device by the process of quantum tunneling: a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator.
利用穿隧式电子显微镜观察碳化钛析出物在。含钛钢中之微结构。
The microstructure of titanium carbides of. Ti-bearing steel has been investigated using...
利用穿隧式电子显微镜观察碳化钛析出物在。含钛钢中之微结构。
The microstructure of titanium carbides of. Ti-bearing steel has been investigated using...
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