基于光电效应原理。我们设计了一个新型脉冲激光光电子枪，它可以作为飞行时间质谱的电子碰撞电离的电离源。
Based on photoemission effect. we design a laser photoemission electron gun for electron impact ionization source of time of flight mass spectrometer.
光电子之间的非弹性碰撞使它们原来获得的能量在整个电离气体中迅速分配。
Inelastic collisions among photoelectrons rapidly distribute their initially gained energy throughout the region of ionized gas.
低能电子碰撞原子内壳层电离截面测量的研究在理论和实际应用方面都具有重要意义。
The study of atomic inner-shell ionization cross-sections by low-energy electron impact is significant in both theoretical researches and practical applications.
主要讨论了电子与离子碰撞电离速率系数的计算，给出了快速拟合计算公式。
The computation on the rate coefficient of electron ion collisional ionization is described and some fitting formulas are given for the accurate and fast calculation.
结果表明，等离子体的产生是由于电子束对氦原子的碰撞电离及其雪崩效应引起的。
The generation mechanism of the plasma and its effects on the output microwave are analyzed.
研究了激光椭偏率对基于光场感生电离(OFI)电子碰撞机制类镍氪(NLK)系统电离参数的影响。
Influences of laser ellipticity on the ionization parameters of Ni-like Kr (NLK) system based on electron collisional scheme of optical-field ionization (OFI) were investigated.
阴极发射出电子用以加热栅极并和产生的可电离气体原子相碰撞来产生离子。
A cathode emits electrons to heat the grid and to collide with produced ionizable gas atoms to generate ions.
电子碰撞过程可将靶原子或离子激发至无数的束缚态、自电离态和对应的连续态，多通道量子数亏损理论能够统一地处理这些激发态。
The target atom or ion may be excited to infinite bound states, auto-ionizing states and adjoint continuum states which can be treated in an unified manner by Multichannel Quantum Defect Theory.
负离子与原子碰撞的单电子脱附过程是普遍存在于等离子体物理、天体物理、电离层物理学中的重要过程。
The single electron detachment of negative ions in collision with atoms is known to be one of the most fundamental processes occurring in plasma physics, astrophysics, and ionospheric physics.
一个高反向偏置电压产生一个强有力的内部电场，加速了通过硅晶格的电子，并通过碰撞电离产生二次电子。
A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.
一个高反向偏置电压产生一个强有力的内部电场，加速了通过硅晶格的电子，并通过碰撞电离产生二次电子。
A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.
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