最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
Finally, the static and transient variation of electron drift velocity in high electric fields are studied.
最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.
计算了不同E/N条件下电子在氮气中的漂移速度，结果与实验数据符合得很好。
The electron drift velocity as a function of E/N is given, which is in good agreement with experimental result.
不稳定性产生的可能机制是由于电子束穿过低密度本底等离子体的漂移速度超过离子声速而激发起来的。
It is suggested that the instability is excited in the low density plasma when the electron beam drift velocities exceed the ion acoustic speed.
得到谱指数和不规则体的漂移速度后，可以进一步得到由外尺度、电子密度均方起伏和不规则体厚度三个参数组成的表达式的值。
Then the expression, consisting of the outer scale, the thickness of the irregular slab and the RMS electron density fluctuation, can be got further.
作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高。
The improvements are attributed by the large increase in average electron mobility as well as in drift velocity at 77 K.
作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高。
The improvements are attributed by the large increase in average electron mobility as well as in drift velocity at 77 K.
应用推荐