电子束轰击炉运行过程会产生高压放电现象，严重时可能损坏高压整流硅堆。
High-voltage (HV) discharge phenomena, which appear in the working process of electron beam bombarding furnace (EBBF), may result in failure of HV silicon rectifier stack (SRS) in the worst cases.
利用电子束轰击和扫描成像手段，首此观察到了电气石的自发极化导致的电极性。
The spontaneous polarity was firstly observed by electron-beam bombardment and scanning electron microscope (STM).
采用强流脉冲电子束轰击固体介质样品，研究了强流脉冲电子束与固体介质的相互作用。
In this paper, the interaction of intense pulsed electron beams with dielectric targets is presented.
截面分析结果显示，表面几十微米范围内，第二相减少，且随电子束轰击次数的增加，热影响区范围增大。
Result of cross section analysis showed that the second phase reduced within a range of several tens microns, and the depth of heat affected zone (HAZ) increased with the increment of pulses.
强流脉冲电子束轰击可以实现316L不锈钢表层的选择性净化，表面织构化及表面快速钛合金化，从而提高不锈钢的耐蚀性。
The main results are summarized as follows:1, HCPEB bombardment induces the selective purification on the top surface of 316L stainless steel, surface texturation and rapid surface alloying with Ti.
用高速显微摄影技术对强流脉冲电子束轰击钽金属靶的过程进行了研究，获得了“神龙一号”加速器上靶材回喷过程的实验图像。
The high speed microscope photography has been used to study on the back-ejecta of tantalum target in DRAGON ONE impacted by high intensity current pulse electron beam.
用高能激光束和电子束轰击实验材料，模拟聚变堆面对等离子体材料在等离子体破裂时的工作状态，考察了4种掺杂石墨材料在热冲击下的热腐蚀规律。
The thermal shock behavior of 4 kinds of impurity doped graphites was investigated under a simulated plasma disruption condition using high-energy laser and electron beam.
利用电子束离子源（EBIS）或者电子束离子陷阱（EBIT）产生的慢速高电荷态重离子束轰击金属靶面，离子束与靶面作用并复合辐射特征X射线；
The electron beam ion trap(EBIT) and the electron ion source(EBIS) are new instruments for the study of X-ray produced by very highly-charged ions when they interact with free electrons.
利用电子束离子源（EBIS）或者电子束离子陷阱（EBIT）产生的慢速高电荷态重离子束轰击金属靶面，离子束与靶面作用并复合辐射特征X射线；
The electron beam ion trap(EBIT) and the electron ion source(EBIS) are new instruments for the study of X-ray produced by very highly-charged ions when they interact with free electrons.
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