z轴部件及其控制信号电子束电流产生传导泄漏，CRT是其主要泄漏源。
And the transmission leakage is always generated by the Z-axis components and its current of controlling signal, whose main source is the CRT.
在直径为6毫米的电子枪窗口后测得电子束峰值电流为7安，脉冲的半峰宽为6～8毫微秒，最大电子能量约为107千电子伏特。
Thee-beam peak current is 7A measured behind a 6mm diameter e-beam window. The pulse duration (FWHM) is 6-8ns and the maximum electron energy is about 107keV.
以向内发射同轴二极管为例从其电流电压关系及电子束运动特性方面验证了模拟的正确性。
Finally, inward-emitting coaxial diode was used as an example to validate the simulation of current-voltage correlation and characteristics of electron beam movement.
本文利用电子束诱生电流（EBIC）对铸造多晶硅中晶界的复合特性进行了研究。
The recombination activity of grain boundaries (GBs) in casting multicrystalline silicon (mc-Si) was investigated through an electron beam induced current (EBIC) technique.
对其相关束流特性进行了理论分析，得到了同轴空间径向传输空间电荷限制电流，以及虚阴极产生的条件和电子束运动的基本规律。
Theoretical analyses are carried out to study the space-charge-limiting current in coaxial configuration and the terms of virtual cathode formation.
从描述电子束运动的基本方程出发，引入一定条件下的近似，获得了一种实用的同轴二极管电流、电压与几何参数关系的近似解析解。
According to the Maxwell equations, an analytic solution related with coaxial diode current, applied voltage and geometry parameters is obtained by introducing certain approximation.
从描述电子束运动的基本方程出发，引入一定条件下的近似，获得了一种实用的同轴二极管电流、电压与几何参数关系的近似解析解。
According to the Maxwell equations, an analytic solution related with coaxial diode current, applied voltage and geometry parameters is obtained by introducing certain approximation.
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