将付里叶变换法运用于电子束曝光的邻近效应校正中，形成了快速、准确的剂量校正法。
By Fourier transform, produces a fast and accurate calculation for dose precompensation in proximity effect correction for electron beam lithography.
在读操作时，则是检测电子束在有电荷区或无电荷区的效应。
In the reading action the effect of the beam on the charged or uncharged area is detected.
此外，用此方法提取的电子散射参数被成功地用于相同实验条件下的电子束临近效应校正。
Furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.
研究了离子通道回旋电子束脉塞(ICECM)中的等离子体波非线性效应。
The plasma wave nonlinear effect of IonChannel Electron Cyclotron Maser (ICECM) is investigated.
结果表明，等离子体的产生是由于电子束对氦原子的碰撞电离及其雪崩效应引起的。
The generation mechanism of the plasma and its effects on the output microwave are analyzed.
电子束焊接具有显著的小孔效应，这一特点决定着电子束焊接过程和普通熔化焊不同，并对其焊接应力和变形产生重要影响。
Electron beam welding has significant keyhole effect, it induces the electron beam welding different from general melting, and also important influence on its welding stresses and distortion.
利用电子束曝光机完成有关邻近效应的实验。
The proximity effect in the E-beam lithography system was verified by experiments.
本文研究了电子束蒸铝MOS结构的热电子雪崩注入的界面效应。
This Paper studies interface effect of avalanche hot electron in MOS structures.
本文的模拟结果不仅能为高能电子束光刻工艺优化曝光条件、降低邻近效应提供理论指导，而且能为进一步的邻近效应的校正提供更精确的数据。
The present results not only can help to optimize the exposure conditions in Electron Beam Lithography, but also supply more accurate data for proximity effect correction.
利用SDS - 3电子束曝光机完成有关邻近效应的试验。
The proximity effect in the SDS-3 E-beam lithography system is verified by experiments.
结果表明，热冲击是高温合金电子束焊接热影响区的微裂纹损伤的主要原因，热冲击损伤效应导致接头力学性能的劣化。
The results show that the HAZ microfissuring damage of superalloy EBW joints induces mechanical properties deterioration which is attributed to the EBW thermal shock.
结果表明，热冲击是高温合金电子束焊接热影响区的微裂纹损伤的主要原因，热冲击损伤效应导致接头力学性能的劣化。
The results show that the HAZ microfissuring damage of superalloy EBW joints induces mechanical properties deterioration which is attributed to the EBW thermal shock.
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