第一次尝试把两个加快的对立的质子束各以3.5兆电子伏特的电压加速时，遭到了失败。只是无意中关闭电源和一个新的磁保护系统跳闸，倾翻了质子束。
The first attempt to accelerate each of two opposing beams of protons to 3.5 TeV apiece failed when a power supply shut down inadvertently and a new magnet-protection system tripped, dumping the beam.
通过实验确定了最佳参数，其中包括：离化电子电流和电压、加速电压、阻止电势、供气压力等。
The optimum parameters, such as electron current and voltage for ionization, acceleration voltage, retarding voltage, gas inlet pressure, were determined by experiments.
使每个连续的光电倍增管电极的电压都比它前面一个电极的电压更高，这样电子就得到加速。
Electrons are accelerated by making the voltage of each successive dynode of the tube more positive than the previous one.
本文提出了在高能电子衍射实验中，当加速电压改变时利用菊池图测量电子波长变化值的方法。
The method to test the variations of the wavelength of electrons using Kikuchi maps when the accelerating voltage is changed in the HEED experiment is put forward.
本文对强流脉冲电子加速器的充电过程进行了分析，并推导出电压传输系数的解析表达式。
The detailed analysis of charging process in the pulsed intense-electron-beamaccelerator is presented. And the expression of voltage-transition coefficient isdeduced as well.
实际应用表明，系统在无人值守情况下可自行调整并稳定调压器输出电压，可满足电子加速器调压器的精确控制和自动控制要求。
It is shown in practice that the system can adjust the variac output voltage automatically and assure the accurate and automatic control of the electronic accelerator.
一个高反向偏置电压产生一个强有力的内部电场，加速了通过硅晶格的电子，并通过碰撞电离产生二次电子。
A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.
在低输入电压范围内，电场加速低能电子成为高能电子的过程为反应控制步骤。
In range of low input voltage, the step of accelerating a low energy electron to a high energy electron with electric field is rate controlling of the discharge chemical reaction of co and H_2.
在低输入电压范围内，电场加速低能电子成为高能电子的过程为反应控制步骤。
In range of low input voltage, the step of accelerating a low energy electron to a high energy electron with electric field is rate controlling of the discharge chemical reaction of co and H_2.
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