电子商务会解决传统模式中非常多的重大问题，解决了这些重大问题，其中一个信息不对称问题。
The electronic commerce will solve the traditional mode is very much in the significant problems solved these big problems, one of which information asymmetry problem.
利用ami方法计算多种酞菁不对称取代物的电子结构与非线性光学特性，并探讨它们之间的关系。
The electronic structures and the non - linear optical properties of some asymmetrically substituted phthalocyanines have been studied using the AMI method.
为提高实验用电子束能量，将原光学速调管的对称结构改造为不对称结构。
To increase the electron beam energy for experiment, the symmetrical configuration of optical klystron is shifted to nonsymmetrical configuration.
利用AM1方法计算多种酞菁不对称取代物的电子结构与非线性光学特性，并探讨它们之间的关系。
The electronic structures and the non-linear optical properties of some asymmetrically substituted phthalocyanines have been studied using the AM1 method.
电子直线加速器的腔式耦合器通过侧面匹配膜片和方波导相连，它引起了腔中场振幅和相位的不对称。
The transition from the rectangular waveguide to the cavity coupler in LINACis made by means of a matching iris, which leads to amplitude and phase asym-metries of fields in the cavity coupler.
自二十世纪七十年代以来，由于电力电子器件及其它非线性负荷在电网中大量的投入使用，使电网的非线性、不稳定性和不对称性日趋严重。
Since 1970s, the nonlinear, the instability and theunbalance of the voltage have become more and more serious due to the electronic device and other nonlinear load in power network.
电子商务市场上尽管存在着大量的商品信息，但仍然存在着信息不对称问题。
Though there is a great amount of goods information in e-Commerce market, information asymmetry exists all the same.
电力电子装置通常设计运行在系统(电网)对称条件下，因此当系统电压不对称时可能会对装置产生严重影响。
Power electronic devices are usually designed to operate in symmetric power systems. So installing power electronic devices in unbalanced power systems can cause problem.
本发明属于微电子器件技术领域，具体公开了一种不对称型源漏场效应晶体管及其制备方法。
The invention belongs to the technical field of a microelectronic device, and more particularly discloses an asymmetrical source-drain field effect transistor and a preparation method thereof.
本发明属于微电子器件技术领域，具体公开了一种不对称型源漏场效应晶体管及其制备方法。
The invention belongs to the technical field of a microelectronic device, and more particularly discloses an asymmetrical source-drain field effect transistor and a preparation method thereof.
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