研究表明，提出的偏转电场法是进行内表面注入处理的有效方法，可以极大提高内表面注入的注入剂量和注入能量。
The deflecting electric field method we presented has been proved to be valid for inner surface PIII, and can increase retained dose and implant energy greatly.
研究表明，提出的偏转电场法是进行内表面注入处理的有效方法，可以极大提高内表面注入的注入剂量和注入能量。
The deflecting electric field method we presented has been proved to be valid for inner surface PIII, and can increase retained dose and implant energy greatly.
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