本发明涉及半导体激光器技术领域，特别是该器件内集成了电吸收调制器和分布布拉格反射半导体激光器的制作方法。
In particular, the invention is related to method for preparing semiconductor laser device with electroabsorption modulator and distributing Bragg reflection being integrated.
采用选择区域生长、量子阱混杂和非对称双波导技术制作了电吸收调制器与半导体光放大器和双波导模斑转换器的单片集成器件。
On the basis of the study of the single circular groove guide and symmetric double circular groove guide, a new structure, asymmetric double circular groove guide, has been put forward.
采用选择区域生长、量子阱混杂和非对称双波导技术制作了电吸收调制器与半导体光放大器和双波导模斑转换器的单片集成器件。
On the basis of the study of the single circular groove guide and symmetric double circular groove guide, a new structure, asymmetric double circular groove guide, has been put forward.
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