举例来说，在EPROM和快闪存储器电路中使用的编程电压电平高于存储器电路中通常使用的电压。
For example, program voltage levels used in EPROM and flash memory circuits are higher than the voltages normally used in memory circuits.
最后，所述集成电路包括一第一电压电平控制器，所述第一电压电平控制器设置成在所述第一及至少第二电流馈电电路上分离对所述npn晶体管进行编程所需的电压。
Finally the integrated circuit has a first voltage level controller provided to split the voltage needed to program the NPN-transistor over the first and at least second current feeding circuit.
最后，所述集成电路包括一第一电压电平控制器，所述第一电压电平控制器设置成在所述第一及至少第二电流馈电电路上分离对所述npn晶体管进行编程所需的电压。
Finally the integrated circuit has a first voltage level controller provided to split the voltage needed to program the NPN-transistor over the first and at least second current feeding circuit.
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