该转换器的高输入阻抗和低失调电压漂移输入增益级可以保证芯片在微弱电压信号下正常工作。
The designed converter could operate well with a slender supply voltage signal because of its high input resistance and low offset drift.
设计制作出一个幅值可调的恒流源及其测试系统，实现稳压二极管电压漂移参数的检测，至关重要。
To design and manufacture a constant-source with adjustable amplitude value and the test system, and to realize the examination of zener diode voltage drift parameter, is very important.
结果发现，多晶硅面注F具有较强的抑制辐射感生阈电压漂移，控制氧化物电荷和界面态生长的能力。
For suppressing the radiation-induced threshold shifts, controlling oxide charges and interface states, fluorine introduction after polysilicon doposition is a better implantation technology.
亚阈斜率、阈值电压漂移、衬底技术和场氧抗辐射能力已经成为器件按比例缩小给器件带来冲击的最主要的四个方面。
The sub-threshold slope, threshold voltage shift, substrate technique and the anti-radiation ability of field oxides are the four main impacts on the device fabrication in size scaling down.
说明顶层的金属纳米晶作为一层额外的电荷俘获层可以通过直接隧穿机制进一步延长保留时间和提高平带电压漂移量。
The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time.
控制电压和由恒流电源输出的电流之间的关系改变可能会产生漂移。
The relationship between the control voltage and the current output by the constant-current source may shift.
结果表明这种结构具有高的击穿电压、低的导通电阻和漂移区中电荷平衡的特点。
The new structure features high breakdown voltage, low on-resistance , and charge balance in the drift region.
主要集中在对器件施加nbt和随后的PBT应力后器件阈值电压的漂移上。
We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT.
频率漂移跟直流电压、度、波比有关。
不同的栅极电压下的温度漂移也不相同。
Temperature drift with different grid voltage is different, too.
在测量领域中，传感器与测量电路一般都不可避免地存在残余电压与零点漂移，即零点误差。
In the field of measurement, the sensors and circuits may inevitably cause residual voltage and zero drift called zero error.
首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
单光束表面光电压谱仪，当光源强度随时间发生漂移时，必然产生结果误差。
Single-beam surface photovoltage spectrum (SPS) apparatus can not avoid the error caused by the drift of light source intensity with time .
文章研究了掺铁铌酸锂晶体在激光辐射下的电荷输运迁移，探讨了光折变过程中光生载流子的漂移、扩散、光致电压以及空间电荷场的动态过程。
The storage dynamics in doped lithium niobate are studied. It gives that the equations of the migration of charges is due to diffusion or drift and photovoltaic effect.
本文简述北京探测器主漂移室电场计算的矩阵电容法和丝电压的优选方案。
The matrix capacity method used for the calculation of the electric field and the choice of the optimum voltages of the wires of the drift chamber used on the Beijing spectrometer (BES) is described.
高电压电平漂移电路允许低压逻辑信号来驱动的IGBT在高达1200V一种操作高侧配置。
High voltage level-shift circuitry allows low voltage logic signals to drive IGBTs in a high side configuration operating up to 1200V.
本文介绍了级联多单元高压变频器使用中点漂移法解决单元故障时提高输出电压的方法。
This paper analyzed the Neutral Point Excursion method(NPEM)of PWM control with Cascaded Multi-cell Multi-Level Inverter.
该器件内置一个精密低噪声、低漂移内部带隙基准电压源，也可采用外部差分基准电压。
The device contains a precision low noise, low drift internal band gap reference and can also accept an external differential reference.
也可以选用外部基准电压源，以满足应用的直流精度与温度漂移要求。
An external reference can also be chosen to suit the dc accuracy and temperature drift requirements of the application.
也可以选用外部基准电压源，以满足应用的直流精度与温度漂移要求。
An external reference can also be chosen to suit the dc accuracy and temperature drift requirements of the application.
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