结果表明，电介质的击穿并不总是发生在电荷的注入过程中，也可以发生在空间电荷的脱阱过程中。
The experimental results show that not only space charge injection but its detrapping also makes samples breakdown.
因此击穿电压的检测必须重视电介质击穿现象的电参数值的测量。
The exact determination of the breakdown voltage must therefore be attached to the measurement of an electrical value characteristic of the dielectric breakdown phenomenon.
击穿性能是电介质材料最基本的要求，提高材料的电气强度是电介质研究最为重要的任务之一。
Breakdown property is the basis requirement to dielectric and the improvement of the electrical strength is one of the most important works in dielectric research field.
提出了芯片门电路硅氧化层静电放电介质击穿的物理模型。
A physical model of dielectric breakdown was presented in IC silicon dioxide films.
电介质中的电枝击穿过程是当前国际上研究的重要课题。
At present, the electrical tree breaking process in the insulatic mate- rial is one of important subject of researches in the world.
电介质中的电枝击穿过程是当前国际上研究的重要课题。
At present, the electrical tree breaking process in the insulatic mate- rial is one of important subject of researches in the world.
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