提出了芯片门电路硅氧化层静电放电介质击穿的物理模型。
A physical model of dielectric breakdown was presented in IC silicon dioxide films.
因此击穿电压的检测必须重视电介质击穿现象的电参数值的测量。
The exact determination of the breakdown voltage must therefore be attached to the measurement of an electrical value characteristic of the dielectric breakdown phenomenon.
因此击穿电压的检测必须重视电介质击穿现象的电参数值的测量。
The exact determination of the breakdown voltage must therefore be attached to the measurement of an electrical value characteristic of the dielectric breakdown phenomenon.
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