• 提出芯片门电路氧化层静电放电介质击穿物理模型

    A physical model of dielectric breakdown was presented in IC silicon dioxide films.

    youdao

  • 因此击穿电压检测必须重视电介质击穿现象参数测量

    The exact determination of the breakdown voltage must therefore be attached to the measurement of an electrical value characteristic of the dielectric breakdown phenomenon.

    youdao

  • 因此击穿电压检测必须重视电介质击穿现象参数测量

    The exact determination of the breakdown voltage must therefore be attached to the measurement of an electrical value characteristic of the dielectric breakdown phenomenon.

    youdao

$firstVoiceSent
- 来自原声例句
小调查
请问您想要如何调整此模块?

感谢您的反馈,我们会尽快进行适当修改!
进来说说原因吧 确定
小调查
请问您想要如何调整此模块?

感谢您的反馈,我们会尽快进行适当修改!
进来说说原因吧 确定