由于生长过程中产生的应力,所有维尔纳叶合成刚玉都会有这样的分割面。
Due to stress in the growth process, a parting plane forms in all Verneuil grown synthetic corundums.
独生子女大学生由于生长过程中所处的家庭环境、教育环境及社会环境的特殊性而存在着一些人格塑造的问题。
Affected by the particularity in family environment, education environment and social environment, university students, to some extent, have problems with the personality cultivation.
由于天然彩棉的色泽是在纤维生长过程中形成的,其色牢度在不同的条件下有所不同。
The color and luster of natural colored cotton is formed in growth course of fiber, so its color fastness is different in different conditions.
由于矿物晶体生长过程中点缺陷和线缺陷容易愈合,多数包裹体以这两种模式形成。
Because the inclusions trapped in point defect and the line defect modes can be easily healed during the growth of mineral crystals, most inclusions formed in these two modes.
由于粉末棒密度不均匀,生长过程中又有气泡产生,CO2光源的功率必须严格控制,并随时调整以适应单晶光纤的生长。
The power of CO2 laser is critical due to the non-uniform density and the air bubble in it. It must be strictly controlled.
水分短缺是植物生长过程中经常遭遇的逆境之一,全球的粮食生产由于干旱而减产造成的损失是所有其它灾害造成的损失之和。
Plant water shortage is one of the main suffers from its environmental surroundings, losses from aridity of the global food productivity are the sums of losses from the other disasters.
实际上,在化合物层的生长过程中同时也伴随着溶解过程,由于其生长速度大于溶解速度,化合物层厚度随钎焊时间的增加而增加。
In fact, the thickness of the intermetallic layer is determined by a combined process including simultaneous dissolution and growth of the intermetallic compound.
室温下,UO_2表面的铝薄膜是以岛状方式生长的,生长过程中由于扩散行为的影响,导致确定薄膜生长方式的强度变化曲线发生了畸变。
At room temperature, al thin film growth on UO_2 followed the VW mode. Under the influence of diffusion action, intensity curves which determine thin film growth mode have some alteration.
由于薄膜的生长过程是一个随机过程,所以蒙特卡罗方法便很自然地被应用于计算机仿真薄膜生长这一过程。
Since the growth process of thin film is of the random state, Monte Carlo method has naturally been used in the process of computer simulation for the growth of thin films.
由于薄膜的生长过程是一个随机过程,所以蒙特卡罗方法便很自然地被应用于计算机仿真薄膜生长这一过程。
Since the growth process of thin film is of the random state, Monte Carlo method has naturally been used in the process of computer simulation for the growth of thin films.
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