通过对MOS电容进行热载子注入和总剂量辐照实验,探讨了MOS结构热载子注入与总剂量辐射响应的相关性。
By comparing the MOS structure's responses to hot-carrier injection and total dose radiation, the correlation between them is investigated.
通过对MOS电容进行热载子注入和总剂量辐照实验,探讨了MOS结构热载子注入与总剂量辐射响应的相关性。
By comparing the MOS structure's responses to hot-carrier injection and total dose radiation, the correlation between them is investigated.
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