在对温度敏感的器件，如热敏电阻，进行温度测量时，要考虑器件的加热问题。
Device heating can be a consideration when making resistance measurements on temperature-sensitive devices such as thermistors.
长期以来，解决微波功率晶体管的电流集中问题的通用做法是使用发射极镇流电阻，以及PTC,CTR热敏电阻等无源器件。
For a long time, a common and popular method to solve current convergence problem of microwave power transistor is using emitter ballasting resistor, such as PTC, CTR thermistor, passive devices etc.
热敏电阻元器件能满足任何电阻-温度曲线和公差。
The thermistor element can be selected to meet any resistance-temperature curve and tolerance.
氧化钒薄膜作为非制冷红外探测器的热敏材料，要求具有高的电阻温度系数(TCR)与合适的电阻值，以满足器件的应用。
As the detecting material of uncooled infrared detectors, vanadium oxide (VOX) thin films need high temperature coefficient of resistance (TCR) and suitable film resistance for using of the device.
适用于中温烧成制作特种电路的内部连线及端头引出线，PTC热敏电阻及半导体陶瓷器件电极等。
Firing temperature for the production of special circuits in the internal connection and End Lead, PTC thermistors, and semiconductor ceramic device electrodes.
以负温度系数热敏电阻为核心器件设计了多通道高精度温度测量系统。
Based on negative temperature coefficient resistance (NTCR), a fine multiple channel temperature measurement system was designed.
两款器件都有一个标准电压输入，当与差分基准电压输入结合使用时，可方便地与一个外部温度传感器(如rtd、热敏电阻或二极管等)接口。
The parts have a standard voltage input, which together with the differential reference input allows easy interface to an external temperature sensor, such as an RTD, thermistor, or diode.
20J应用于空气温度感测。热敏电阻元器件能满足任何电阻-温度曲线和公差。
The 20J is used in air temperature sensing applications The thermistor element can be selected to meet any resistance-temperature curve and tolerance.
理论分析了复合基底的微尺度残余应力及其热敏电阻，表明它们对器件的性能影响不可忽视，需要在设计时候给予考虑。
Residual stress and thermal induce resistance of complex substrates are theoretical analyzed, and these parameters can't neglect when the MEMS devices are designed.
理论分析了复合基底的微尺度残余应力及其热敏电阻，表明它们对器件的性能影响不可忽视，需要在设计时候给予考虑。
Residual stress and thermal induce resistance of complex substrates are theoretical analyzed, and these parameters can't neglect when the MEMS devices are designed.
应用推荐