从激光器的单模速率方程出发，利用数值方法研究了在不同的增益开关状态下，输出光脉冲的时域及频域特性。
With numerical calculation from single mode rate equation of semiconductor laser, the output pulse parameters in time and frequency domains are investigated under different gain switching conditions.
理论研究指出激光器的增益开关状态对输出光脉冲的啁啾分布有较大影响，从而影响了脉冲的压缩效果。
The achieved results indicate that the gain switching conditions greatly influence the chirp of optical pulses and the compression effect.
报道了利用增益开关分布反馈半导体激光器、F-P光学滤波器及掺饵光纤放大器研制成光孤子源的研究工作。
The studies on an optical soliton source which is prepared using a gain -switched DFB laser, a F-P optical filter and an Er-doped fiber amplifier are reported.
研究了不同调制速率下的增益开关半导体激光器的最佳工作状态。
The optimal operating condition of gain switched semiconductor laser with different modulation rate is studied in this paper.
作为光通讯以及光电取样检测系统的主要光源，增益开关半导体激光器产生的激光脉冲质量受到了极大的关注。
As the major source of optical communication and optic-electric sampling detection, the quality of optical pulse generated by Gain-switched semiconductor laser gets more and more attention.
报道了两个增益开关调制的法布里珀罗半导体激光器互注入锁定实验方案，可产生双波长可调谐光脉冲。
Amutual pulse injection-seeding scheme is developed to generate tunable dual-wavelength optical short pulses by the use of two gain-switched fabry-perot (F-P) semiconductor lasers.
对设有内置式RF电路的分布反馈(DFB)半导体激光器在增益开关工作状态下出现反常光谱的原因进行了分析。
The abnormal spectrum phenomenon of distributed feedback (DFB) laser embedded with RF circuit generates under gain-switching operation was analyzed.
晶圆级，激光微调，薄膜电阻和温度，真实姿态补偿NMOS管开关保证在整个工作温度和特殊林耳和经营范围的增益稳定性。
Wafer-level, laser-trimmed, thin-film resistors and temperature-compensated NMOS switches assure operation over the full operating temperature range with exceptional lin- ear and gain stability.
晶圆级，激光微调，薄膜电阻和温度，真实姿态补偿NMOS管开关保证在整个工作温度和特殊林耳和经营范围的增益稳定性。
Wafer-level, laser-trimmed, thin-film resistors and temperature-compensated NMOS switches assure operation over the full operating temperature range with exceptional lin- ear and gain stability.
应用推荐